參數(shù)資料
型號: IDT6116LA55TD
廠商: Integrated Device Technology, Inc.
英文描述: Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-SOIC 0 to 70
中文描述: 的CMOS靜態(tài)RAM 16K的(2K × 8位)
文件頁數(shù): 7/10頁
文件大?。?/td> 91K
代理商: IDT6116LA55TD
5.1
7
IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TIMING WAVEFORM OF READ CYCLE NO. 2
(1, 2, 4)
TIMING WAVEFORM OF READ CYCLE NO. 1
(1, 3)
TIMING WAVEFORM OF READ CYCLE NO. 3
(1, 3, 4)
NOTES:
1.
WE
is HIGH for Read cycle.
2. Device is continously selected,
CS
is LOW.
3. Address valid prior to or coincident with
CS
transition LOW.
4.
OE
is LOW.
5. Transition is measured
±
500mV from steady state.
CS
t
ACS
DATA
OUT
t
CLZ(5)
t
CHZ(5)
DATA VALID
3089 drw 08
ADDRESS
t
RC
t
AA
t
OH
t
OH
DATA
OUT
3089 drw 07
PREVIOUS DATA VALID
DATA VALID
ADDRESS
OE
CS
t
RC
t
AA
t
OE
t
ACS
t
CLZ(5)
DATA
OUT
t
OH
t
OLZ(5)
t
OHZ(5)
t
CHZ(5)
3089 drw 06
DATA
VALID
t
PD
I
CC
I
SB
t
PU
V
CC
Supply
Currents
相關(guān)PDF資料
PDF描述
IDT6116LA55TP Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-SOIC 0 to 70
IDT6116LA55TPB Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-PDIP 0 to 70
IDT6116LA55Y Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-PDIP 0 to 70
IDT6116LA70D Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-SOIC -40 to 85
IDT6116LA70DB Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-SOIC -40 to 85
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT6116LA55TDB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 55NS 24CERDIP
IDT6116LA55TP 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT)
IDT6116LA55TPB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT)
IDT6116LA55Y 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT)
IDT6116LA55YB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT)