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參數(shù)資料
| 型號： | IDT6116LA45TPB |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | CMOS STATIC RAM 16K (2K x 8 BIT) |
| 中文描述： | 的CMOS靜態(tài)RAM 16K的（2K × 8位） |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 91K |
| 代理商： | IDT6116LA45TPB |
5.1
3
IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6116SA15
(2)
6116LA15
(2)
Com'l.
105
6116SA20
6116LA20
6116SA25
6116LA25
6116SA35
6116LA35
Com'l.
80
Symbol
I
CC1
Parameter
Power
SA
Mil. Com'l. Mil. Com'l.
—
105
Mil.
90
Mil.
90
Unit
mA
Operating Power Supply
Current,
CS
≤
V
IL
,
Outputs Open,
V
CC
= Max., f = 0
Dynamic Operating
Current,
CS
≤
V
IL
,
V
CC
= Max.,
Outputs Open, f = f
MAX
(4)
Standby Power Supply
Current (TTL Level)
CS
≥
V
IH
, V
CC
= Max.,
Outputs Open, f = f
MAX
(4)
Full Standby Power
Supply Current
(CMOS Level),
CS
≥
V
HC
,
V
CC
= Max., V
IN
≥
V
HC
or V
IN
≤
V
LC
, f = 0
130
80
LA
95
—
95
120
75
85
75
85
I
CC2
SA
150
—
130
150
120
135
100
115
mA
LA
140
—
120
140
110
125
95
105
I
SB
SA
40
—
40
50
40
45
25
35
mA
LA
35
—
35
45
35
40
25
30
I
SB1
SA
2
—
2
10
2
10
2
10
mA
LA
0.1
—
0.1
0.9
0.1
0.9
0.1
0.9
NOTES:
1.
All values are maximum guaranteed values.
2. 0
°
C to + 70
°
C temperature range only.
3. –55
°
C to + 125
°
C temperature range only.
4. f
MAX
= 1/t
RC
, only address inputs are cycling at f
MAX,
f = 0 means address inputs are not changing.
3089 tbl 08
DC ELECTRICAL CHARACTERISTICS
(1)
V
CC
= 5.0V
±
10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V
DC ELECTRICAL CHARACTERISTICS
V
CC
= 5.0V
±
10%
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Grade
Temperature
Military
–55
°
C to +125
°
C
Commercial
0
°
C to +70
°
C
GND
0V
0V
VCC
5.0V
±
10%
5.0V
±
10%
3089 tbl 05
IDT6116SA
Min.
—
—
—
—
—
2.4
IDT6116LA
Min.
—
—
—
—
—
2.4
Symbol
Parameter
Test Conditions
Max.
10
5
10
5
0.4
—
Max.
5
2
5
2
0.4
—
Unit
MIL.
COM'L.
MIL.
COM'L.
|I
LI
|
Input Leakage Current
V
CC
= Max., V
IN
= GND to V
CC
V
CC
= Max.
CS
= V
IH
, V
OUT
= GND to V
CC
I
OL
= 8mA, V
CC
= Min.
I
OH
= –4mA, V
CC
= Min.
μ
A
|I
LO
|
V
OL
V
OH
Output Leakage Current
Output Low Voltage
Output High Voltage
μ
A
V
V
3089 tbl 07
RECOMMENDED DC
OPERATING CONDITIONS
Symbol
Parameter
V
CC
Supply Voltage
G
ND
Supply Ground
V
IH
Input High Voltage
V
IL
Input Low Voltage
NOTES:
1. V
IL
(min.) = –3.0V for pulse width less than 20ns, once per cycle.
2. V
IN
must not exceed V
CC
+0.5V.
Min.
4.5
0
2.2
–0.5
(1)
Typ.
5.0
0
3.5
—
Max.
5.5
(2)
0
V
CC
+0.5
0.8
Unit
V
V
V
V
3089 tbl 06
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| IDT6116LA20TPB | Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SOIC 0 to 70 |
| IDT6116LA20Y | Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SOIC 0 to 70 |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IDT6116LA45TPG | 功能描述:IC SRAM 16KBIT 45NS 24DIP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 產品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT6116LA45TPGI | 功能描述:IC SRAM 16KBIT 45NS 24DIP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 產品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT6116LA45TPI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116LA45Y | 制造商:Integrated Device Technology Inc 功能描述: |
| IDT6116LA45YB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
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