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參數(shù)資料
| 型號(hào)： | IDT6116LA35PB |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SOIC -40 to 85 |
| 中文描述： | 的CMOS靜態(tài)RAM 16K的（2K × 8位） |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 91K |
| 代理商： | IDT6116LA35PB |
5.1
2
IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
Terminal Voltage
V
TERM
(2)
with Respect to GND –0.5 to + 7.0 –0.5 to +7.0
Operating
T
A
Temperature
Temperature
T
BIAS
Under Bias
Storage
T
STG
Temperature
Power
P
T
Dissipation
I
OUT
DC Output Current
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. V
TERM
must not exceed V
CC
+0.5V.
Commercial
Military
Unit
V
0 to + 70
–55 to +125
°
C
–55 to + 125 –65 to +135
°
C
–55 to + 125 –65 to +150
°
C
1.0
50
1.0
50
W
mA
3089 tbl 04
TRUTH TABLE
(1)
Mode
Standby
Read
Read
Write
NOTE:
1. H = V
IH
, L = V
IL
, X = Don't Care.
CS
OE
WE
I/O
H
L
L
L
X
L
H
X
X
H
H
L
High-Z
DATA
OUT
High-Z
DATA
IN
3089 tbl 02
PIN DESCRIPTIONS
A
0
–A
13
I/O
0
–I/O
7
CS
Address Inputs
Data Input/Output
Chip Select
Write Enable
Output Enable
Power
Ground
WE
OE
V
CC
GND
3089 tbl 01
CAPACITANCE
(T
A
= +25
°
C, F = 1.0 MH
Z
)
Symbol
Parameter
(1)
C
IN
Input Capacitance
C
I/O
I/O Capacitance
NOTE:
1. This parameter is determined by device characterization, but is not
production tested.
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
8
Unit
pF
pF
3089 tbl 03
DIP/SOIC/SOJ
TOP VIEW
3089 drw 02
5
6
7
8
9
10
11
12
GND
1
2
3
4
24
23
22
21
20
19
18
17
16
15
14
13
P24-2
P24-1
D24-2
D24-1
SO24-2
&
S024-4
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
V
CC
A
8
A
9
WE
OE
A
10
CS
I/O
5
I/O
4
I/O
3
A
7
A
6
I/O
7
I/O
6
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| IDT6116LA35SO | Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SOIC -40 to 85 |
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| IDT6116LA35PI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116LA35SO | 功能描述:IC SRAM 16KBIT 35NS 24SOIC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT6116LA35SO/2316 | 功能描述:IC SRAM 16KBIT 35NS 24SOIC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT6116LA35SO8 | 功能描述:IC SRAM 16KBIT 35NS 24SOIC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT6116LA35SOB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
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