參數(shù)資料
型號: IDT6116LA35P
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: CMOS STATIC RAM 16K (2K x 8 BIT)
中文描述: 2K X 8 STANDARD SRAM, 35 ns, PDIP24
封裝: 0.600 INCH, PLASTIC, DIP-24
文件頁數(shù): 8/10頁
文件大?。?/td> 91K
代理商: IDT6116LA35P
5.1
8
IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6116SA15
(1)
6116LA15
(1)
Min.
6116SA20
6116LA20
Min.
6116SA25
6116LA25
Min.
6116SA35
6116LA35
Min.
Symbol
WRITE CYCLE
t
WC
t
CW
Parameter
Max.
Max.
Max.
Max.
Unit
Write Cycle Time
Chip Select to End-of-
Write
Address Valid to End-
of-Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output
in High-Z
Data to Write Time
Overlap
Data Hold from Write
Time
Output Active from
End-of-Write
15
13
20
15
25
17
35
25
ns
ns
t
AW
14
15
17
25
ns
t
AS
t
WP
t
WR
t
WHZ
(3)
0
7
0
12
0
8
0
15
0
16
0
20
0
20
ns
ns
ns
ns
12
0
t
DW
12
12
13
15
ns
t
DH
(4)
0
0
0
0
ns
t
OW
(3,4)
0
0
0
0
ns
3089 tbl 14
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V
±
10%, All Temperature Ranges)
6116SA45
6116LA45
Min.
6116SA55
(2)
6116LA55
(2)
Min.
6116SA70
(2)
6116LA70
(2)
Min. Max.
6116SA90
(2)
6116LA90
(2)
Min.
6116SA120
(2)
6116LA120
(2)
Min.
6116SA150
(2)
6116LA150
(2)
Min.
Symbol
WRITE CYCLE
t
WC
t
CW
Parameter
Max.
Max.
Max.
Max.
Max.
Unit
Write Cycle Time
Chip Select to End of
Write
Address Valid to End
of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output
in High-Z
Data to Write Time
Overlap
Data Hold from Write
Time
Output Active from
End of Write
45
30
55
40
70
40
90
55
120
70
150
90
ns
ns
t
AW
30
45
65
80
105
120
ns
t
AS
t
WP
t
WR
t
WHZ
(3)
0
25
5
40
5
30
15
40
5
35
15
55
5
40
20
70
5
40
20
90
10
40
ns
ns
ns
ns
25
0
t
DW
20
25
30
30
35
40
ns
t
DH
(4)
0
5
5
5
5
10
ns
t
OW
(3,4)
0
0
0
0
0
0
ns
NOTES:
1. 0
°
C to +70
°
C temperature range only.
2. –55
°
C to +125
°
C temperature range only.
3. This parameter guaranteed with AC Load (Figure 2) by device characterization, but is not production tested.
4. The specification for t
DH
must be met by the device supplying write data to the RAM under all operation conditions. Although t
DH
and t
OW
values will vary
over voltage and temperature, the actual t
DH
will always be smaller than the actual t
OW
.
3089 tbl 15
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V
±
10%, All Temperature Ranges)
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