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參數(shù)資料
| 型號： | IDT6116LA35D |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SO 0 to 70 |
| 中文描述： | 2K X 8 STANDARD SRAM, 35 ns, CDIP24 |
| 封裝： | 0.600 INCH, CERDIP-24 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 91K |
| 代理商： | IDT6116LA35D |
5.1
7
IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TIMING WAVEFORM OF READ CYCLE NO. 2
(1, 2, 4)
TIMING WAVEFORM OF READ CYCLE NO. 1
(1, 3)
TIMING WAVEFORM OF READ CYCLE NO. 3
(1, 3, 4)
NOTES:
1.
WE
is HIGH for Read cycle.
2. Device is continously selected,
CS
is LOW.
3. Address valid prior to or coincident with
CS
transition LOW.
4.
OE
is LOW.
5. Transition is measured
±
500mV from steady state.
CS
t
ACS
DATA
OUT
t
CLZ(5)
t
CHZ(5)
DATA VALID
3089 drw 08
ADDRESS
t
RC
t
AA
t
OH
t
OH
DATA
OUT
3089 drw 07
PREVIOUS DATA VALID
DATA VALID
ADDRESS
OE
CS
t
RC
t
AA
t
OE
t
ACS
t
CLZ(5)
DATA
OUT
t
OH
t
OLZ(5)
t
OHZ(5)
t
CHZ(5)
3089 drw 06
DATA
VALID
t
PD
I
CC
I
SB
t
PU
V
CC
Supply
Currents
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT6116LA35DB | Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SO 0 to 70 |
| IDT6116LA35P | CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116LA35PB | Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SOIC -40 to 85 |
| IDT6116LA35SO | Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SOIC -40 to 85 |
| IDT6116LA35TD | Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SOIC -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT6116LA35DB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 35NS 24CERDIP |
| IDT6116LA35L24 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| IDT6116LA35L24B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| IDT6116LA35P | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116LA35PB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
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