參數(shù)資料
型號： IDT6116LA25D
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SOIC 0 to 70
中文描述： 2K X 8 STANDARD SRAM, 25 ns, CDIP24
封裝： 0.600 INCH, CERDIP-24
文件頁數(shù)： 6/10頁
文件大?。?/td> 91K
代理商： IDT6116LA25D
5.1
6
IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
3089 tbl 12
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V
±
10%, All Temperature Ranges) (Continued)
6116SA45
6116LA45
6116SA55
(2)
6116LA55
(2)
6116SA70
(2)
6116SA90
(2)
6116LA70
(2)
6116LA90
(2)
6116SA120
(2)
6116LA120
(2)
6116SA150
(2)
6116LA150
(2)
Symbol
READ CYCLE
t
RC
t
AA
t
ACS
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max. Min.
Max.
Min.
Max.
Unit
Read Cycle Time
Address Access Time
Chip Select Access Time
45
—
—
—
45
45
55
—
—
—
55
50
70
—
—
—
70
65
90
—
—
—
90
90
120
—
—
—
120
120
150
—
—
—
150
150
ns
ns
ns
t
CLZ
(3)
Chip Select to Output in
Low-Z
5
—
5
—
5
—
5
—
5
—
5
—
ns
t
OE
Output Enable to Output
Valid
—
25
—
40
—
50
—
60
—
80
—
100
ns
t
OLZ
(3)
Output Enable to Output
in Low-Z
5
—
5
—
5
—
5
—
5
—
5
—
ns
t
CHZ
(3)
Chip Deselect to Output
in High-Z
—
20
—
30
—
35
—
40
—
40
—
40
ns
t
OHZ
(3)
Output Disable to Output
in High-Z
Output Hold from
Address Change
—
15
—
30
—
35
—
40
—
40
—
40
ns
t
OH
5
—
5
—
5
—
5
—
5
—
5
—
ns
NOTES:
1. 0
°
C to + 70
°
C temperature range only.
2. –55
°
C to + 125
°
C temperature range only.
3. This parameter guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
3089 tbl 13
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V
±
10%, All Temperature Ranges)
6116SA15
(1)
6116LA15
(1)
Symbol
Parameter
Min.
Max.
READ CYCLE
t
RC
Read Cycle Time
15
t
AA
Address Access Time
—
t
ACS
Chip Select Access Time
—
t
CLZ
(3)
Chip Select to Output in
5
Low-Z
t
OE
Output Enable to Output
—
Valid
t
OLZ
(3)
Output Enable to Output
0
in Low-Z
t
CHZ
(3)
Chip Deselect to Output
—
in High-Z
t
OHZ
(3)
Output Disable to Output
—
in High-Z
t
OH
Output Hold from
5
Address Change
t
PU
(3)
Chip Select to Power-Up
0
Time
t
PD
(3)
Chip Deselect to Power-
—
Down Time
6116SA20
6116LA20
Min.
6116SA25
6116LA25
Min.
6116SA35
6116LA35
Min.
Max.
Max.
Max.
Unit
—
15
15
—
20
—
—
5
—
19
20
—
25
—
—
5
—
25
25
—
35
—
—
5
—
35
35
—
ns
ns
ns
ns
10
—
10
—
13
—
20
ns
—
0
—
5
—
5
—
ns
10
—
11
—
12
—
15
ns
8
—
8
—
10
—
13
ns
—
5
—
5
—
5
—
ns
—
0
—
0
—
0
—
ns
15
—
20
—
25
—
35
ns
相關PDF資料
PDF描述
IDT6116LA25P Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-PDIP 0 to 70
IDT6116LA25TPB Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-PDIP 0 to 70
IDT6116LA25Y Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SO 0 to 70
IDT6116LA35D Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SO 0 to 70
IDT6116LA35DB Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SO 0 to 70
相關代理商/技術參數(shù)
參數(shù)描述
IDT6116LA25DB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 25NS 24CERDIP
IDT6116LA25L24 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
IDT6116LA25L24B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
IDT6116LA25P 制造商:Integrated Device Technology Inc 功能描述:
IDT6116LA25PB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT)
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*