參數(shù)資料
型號(hào)： IDT54FCT2652DTE
廠商： Integrated Device Technology, Inc.
英文描述： Ceramic Chip Capacitors / Standard X7R; Capacitance [nom]: 1uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R; Lead Style: Surface Mount Chip; Lead Dimensions: 1210; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.126" x 0.098"; Container: Bulk; Features: Unmarked
中文描述： 快速CMOS八端口收發(fā)器/寄存器（3態(tài)）
文件頁(yè)數(shù)： 6/9頁(yè)
文件大小： 189K
代理商： IDT54FCT2652DTE
6.20
6
IDT54/74FCT646/2646/652/2652T/AT/CT/DT, 648T/AT/CT
FAST CMOS OCTAL TRANSCEIVER/REGISTER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
OUTPUT DRIVE CHARACTERISTICS FOR FCT2646T/2652T
2634 lnk 07
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25
°
C ambient.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. The test limit for this parameter is
±
5
μ
A at T
A
= –55
°
C.
5. This parameter is guaranteed but not tested.
POWER SUPPLY CHARACTERISTICS
2634 tbl 08
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25
°
C ambient.
3. Per TTL driven input (V
IN
= 3.4V). All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
I
CC
D
H
N
T
+ I
CCD
(f
CP/
2 + f
i
N
i
)
I
CC
= Quiescent Current
I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
f
i
= Input Frequency
N
i
= Number of Inputs at f
i
All currents are in milliamps and all frequencies are in megahertz.
Symbol
I
ODL
I
ODH
Parameter
Test Conditions
(1)
Min.
16
–16
Typ.
(2)
48
–48
Max.
—
—
Unit
mA
mA
Output LOW Current
Output HIGH Current
V
CC
= 5V, V
IN
= V
IH
or
V
IL,
V
OUT
= 1.5V
(3)
V
CC
= 5V, V
IN
= V
IH
or V
IL,
V
OUT
= 1.5V
(3)
V
OH
Output HIGH Voltage
V
CC
= Min.
V
IN
= V
IH
or
V
IL
V
CC
= Min.
V
IN
= V
IH
or V
IL
I
OH
= –12mA MIL.
I
OH
= –15mA COM'L.
I
OL
= 12mA
2.4
3.3
—
V
V
OL
Output LOW Voltage
—
0.3
0.50
V
Symbol
I
CC
Parameter
Test Conditions
(1)
Min.
—
Typ.
(2)
0.5
Max.
2.0
Unit
mA
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply Current
(4)
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
GAB =
GBA
= GND or
G
= DIR = GND
One Input Toggling
50% Duty Cycle
V
CC
= Max.
Outputs Open
f
CP
= 10MHz
50% Duty Cycle
GAB =
GBA
= GND or
G
= DIR = GND
One Bit Toggling
at fi = 5MHz
50% Duty Cycle
V
CC
= Max.
Outputs Open
f
CP
= 10MHz
50% Duty Cycle
GAB =
GBA
= GND or
G
= DIR = GND
Eight Bits Toggling
at fi = 2.5MHz
50% Duty Cycle
I
CCD
V
IN
= V
CC
V
IN
= GND
FCTxxxT
—
0.15
0.25
mA/
MHz
FCT2xxxT
—
0.06
0.12
I
C
Total Power Supply Current
(6)
V
IN
= V
CC
V
IN
= GND
FCTxxxT
—
1.5
3.5
mA
FCT2xxxT
—
0.6
2.2
V
IN
= 3.4
V
IN
= GND
FCTxxxT
—
2.0
5.5
FCT2xxxT
1.1
4.2
V
IN
= V
CC
V
IN
= GND
FCTxxxT
—
3.8
7.3
(5)
FCT2xxxT
—
1.5
4.0
(5)
V
IN
= 3.4
V
IN
= GND
FCTxxxT
—
6.0
16.3
(5)
FCT2xxxT
—
3.8
13.0
(
5)
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