參數(shù)資料
型號(hào): IDB30E60
英文描述: ?30A EmCon in TO263?
中文描述: ?30A條在TO263快恢復(fù)?
文件頁數(shù): 2/9頁
文件大?。?/td> 212K
代理商: IDB30E60
2001-12-06
Page 2
IDP30E60
IDB30E60
Preliminary data
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
R
thJA
R
thJA
-
-
1.05
K/W
Thermal resistance, junction - ambient, leaded
-
-
62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
-
-
-
35
62
-
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Reverse leakage current
V
R
=600V,
T
j
=25°C
V
R
=600V,
T
j
=150°C
Forward voltage drop
I
R
-
-
-
-
50
2500
μA
I
F
=30A,
T
j
=25°C
I
F
=30A,
T
j
=150°C
V
F
-
-
1.45
1.45
2
-
V
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
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