參數(shù)資料
型號(hào): ICS840004AG-11LFT
廠商: IDT, Integrated Device Technology Inc
文件頁(yè)數(shù): 7/13頁(yè)
文件大小: 0K
描述: IC FREQ SYNTHESIZER 20-TSSOP
標(biāo)準(zhǔn)包裝: 2,500
系列: HiPerClockS™, FemtoClock™
類型: 頻率合成器
PLL:
輸入: 晶體
輸出: LVCMOS,LVTTL
電路數(shù): 1
比率 - 輸入:輸出: 1:4
差分 - 輸入:輸出: 無(wú)/無(wú)
頻率 - 最大: 140MHz
除法器/乘法器: 是/無(wú)
電源電壓: 3.135 V ~ 3.465 V
工作溫度: 0°C ~ 70°C
安裝類型: 表面貼裝
封裝/外殼: 20-TSSOP(0.173",4.40mm 寬)
供應(yīng)商設(shè)備封裝: 20-TSSOP
包裝: 帶卷 (TR)
其它名稱: 840004AG-11LFT
ICS840004-11 Data Sheet
FEMTOCLOCK CRYSTAL-TO-LVCMOS/LVTTL FREQUENCY SYNTHESIZER
ICS840004AG-11 REVISION A SEPTEMBER 16, 2009
3
2009 Integrated Device Technology, Inc.
Absolute Maximum Ratings
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond
those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect product reliability.
DC Electrical Characteristics
Table 3A. Power Supply DC Characteristics, VDD = VDDO = 3.3V ± 5%, TA = 0°C to 70°C
Table 3B. LVCMOS/LVTTL DC Characteristics, VDD = VDDO = 3.3V ± 5%, TA = 0°C to 70°C
NOTE 1: Outputs terminated with 50
to V
DDO/2. See Parameter Measurement Information section. Load Test Circuit diagram.
Table 4. Crystal Characteristics
NOTE: Characterized using an 18pF parallel resonant crystal.
Item
Rating
Supply Voltage, VDD
4.6V
Inputs, VI
-0.5V to VDD + 0.5V
Outputs, VO
-0.5V to VDDO + 0.5V
Package Thermal Impedance,
θ
JA
73.2
°C/W (0 lfpm)
Storage Temperature, TSTG
-65
°C to 150°C
Symbol
Parameter
Test Conditions
Minimum
Typical
Maximum
Units
VDD
Core Supply Voltage
3.135
3.3
3.465
V
VDDA
Analog Supply Voltage
3.135
3.3
3.465
V
VDDO
Output Supply Voltage
3.135
3.3
3.465
V
IDD
Power Supply Current
100
mA
IDDA
Analog Supply Current
12
mA
IDDO
Output Supply Current
No Load
10
mA
Symbol
Parameter
Test Conditions
Minimum
Typical
Maximum
Units
VIH
Input High Voltage
2
VDD + 0.3
V
VIL
Input Low Voltage
-0.3
0.8
V
IIH
Input High Current
OE, F_SEL
VDD = VIN = 3.465V
5
A
IIL
Input Low Current
OE, F_SEL
VDD = 3.465V, VIN = 0V
-150
A
VOH
Output High Voltage; NOTE 1
VDDO = 3.3V ± 5%
2.6
V
VOL
Output Low Voltage; NOTE 1
VDDO = 3.3V ± 5%
0.5
V
Parameter
Test Conditions
Minimum
Typical
Maximum
Units
Mode of Oscillation
Fundamental
Frequency
25
MHz
Equivalent Series Resistance (ESR)
50
Shunt Capacitance
7pF
Drive Level
1mW
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