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參數(shù)資料
| 型號(hào)： | ICS3726M-02LFT |
| 英文描述： | HIGH PERFORMANCE VCXO |
| 中文描述： | 高性能石英振蕩器 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 100K |
| 代理商： | ICS3726M-02LFT |
H
IGH
P
ERFORMANCE
VCXO
MDS 3726-02 B
5
Revision 120505
Integrated Circuit Systems
●
525 Race Street, San Jose, CA 95126
●
tel (408) 297-1201
●
www.icst.com
ICS3726-02
PRELIMINARY INFORMATION
DC Electrical Characteristics
VDD=3.3 V ±5%
, Ambient temperature 0 to +70
°
C, unless stated otherwise
Parameter
Symbol
Operating Voltage
VDD
Output High Voltage
V
OH
Output Low Voltage
V
OL
Output High Voltage (CMOS
Level)
Operating Supply Current
IDD
Short Circuit Current
I
OS
VIN, VCXO Control Voltage
V
IA
AC Electrical Characteristics
VDD = 3.3 V ±5%
, Ambient Temperature 0 to +70
°
C, unless stated otherwise
Parameter
Symbol
Output Frequency
F
O
Crystal Pullability
F
P
VCXO Gain
Note 1: External crystal device must conform with Pullable Crystal Specifications listed on page 3.
Conditions
Min.
3.15
2.4
Typ.
Max.
3.45
Units
V
V
V
V
I
OH
= -12 mA
I
OL
= 12 mA
I
OH
= -4 mA
0.4
V
OH
VDD-0.4
No load
6
mA
mA
V
±50
0
3.3
Conditions
Min.
Typ.
Max.
Units
20
52
MHz
0V< VIN < 3.3 V, Note 1
+ 200
ppm
VIN = VDD/2 + 1 V, Note 1
0.8 to 2.0 V, C
L
=15 pF
2.0 to 0.8 V, C
L
=15 pF
Measured at 1.4 V, C
L
=15 pF
C
L
=15 pF @35.328 MHz
C
L
=15 pF@35.328 MHz
Integrated 12 kHz to 20 MHz
@ 35.328 MHz
@35.328 MHz Carrier
frequency
150
ppm/V
ns
ns
%
ps
ps
ps
Output Rise Time
Output Fall Time
Output Clock Duty Cycle
Period Jitter RMS
Period Jitter P- P
Integrated Jitter RMS
t
OR
t
OF
t
D
t
J
t
J
1.5
1.5
60
40
50
6.7
46
1
Phase Noise relative to
Carrier
@10 Hz
@100 Hz
@1 kHz
@10 kHz
@100 kHz
@1 MHz
-65
-90
-120
-140
-147
-147
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
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