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參數(shù)資料
| 型號(hào)： | IC61C1024L-25T |
| 英文描述： | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 128K的× 8高速CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 2/11頁(yè) |
| 文件大小： | 204K |
| 代理商： | IC61C1024L-25T |
IC61C1024
IC61C1024L
2
Integrated Circuit Solution Inc.
AHSR008-0B 10/18/2001
128K x 8 HIGH-SPEED
CMOS STATIC RAM
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. Copyright 2000, Integrated Circuit Solution Inc.
DESCRIPTION
The
ICSI
IC61C1024 and IC61C1024L are very high-speed,
low power, 131,072-word by 8-bit CMOS static RAMs. They
are fabricated using
ICSI
's high-performance CMOS
technology. This highly reliable process coupled with innovative
circuit design techniques, yields higher performance and low
power consumption devices.
When
CE1
is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable
inputs,
CE1
and CE2. The active LOW Write Enable (
WE
)
controls both writing and reading of the memory.
The IC61C1024 and IC61C1024L are available in 32-pin
300mil SOJ, and 8*20mm TSOP-1, and 8*13.4mm TSOP-1
packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
CE1
CE2
OE
WE
512 x 2048
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
FEATURES
High-speed access time: 12, 15, 20, 25 ns
Low active power: 600 mW (typical)
Low standby power: 500 μW (typical) CMOS
standby
Output Enable (
OE
) and two Chip Enable
(
CE1
and CE2) inputs for ease in applications
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 5V (±10%) power supply
Low power version available: IC61C1024L
Commercial and industrial temperature ranges
available
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IC61C1024L-15KI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IC61C1024-25KI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IC61C1024-25T | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IC61C1024-25TI | RES CH 68.1 EW 1% |
| IC61C1024L | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC61C1024L-25TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IC61C256AH | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IC61C256AH-10J | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IC61C256AH-10N | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K x 8 HIGH-SPEED CMOS STATIC RAM |
| IC61C256AH-10T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K x 8 HIGH-SPEED CMOS STATIC RAM |
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