參數(shù)資料
型號: IC43R32400-4B
英文描述: 1M x 32 Bit x 4 Banks (128-MBIT) DDR SDRAM
中文描述: 100萬× 32位× 4個銀行(128兆位)DDR SDRAM內(nèi)存
文件頁數(shù): 12/18頁
文件大小: 3877K
代理商: IC43R32400-4B
IC43R32400
12
Integrated Circuit Solution Inc.
DDR003-0B 11/10/2004
Electrical Characteristics and Recommended A.C. Operating Conditions
Symbol Parameter
Min Man Min Max
4.0 5.0 Unit
CL = 3
4 10
5 10
ns
t
CK
Clock cycle time
CL = 4
4 10
5
10
CL = 5
4 5 5
10
0.55
t
CK
0.55
t
CK
t
CH
t
CL
t
DQSCK
t
AC
t
DQSQ
t
RPRE
t
RPST
t
DQSS
t
WPRES
t
WPREH
t
WPST
t
DQSH
t
DQSL
t
IS
t
DS
t
DH
Clock high level width
0.45 0.55
0.45
Clock low level width
0.45
0.55
0.45
DQS-out access time from CK,CK#
-0.7 0.7
-0.7 0.7
ns
ns
Output access time from CK,CK#
-0.7 0.7
-0.7 0.7
DQS-DQ Skew
-
0.4
-
0.45
ns
Read preamble
0.9
1.1
0.9
1.1
t
CK
t
CK
Read postamble
0.4
0.6
0.4
0.6
1.15
t
CK
CK to valid DQS-in
0.85
1.15
0.85
DQS-in setup time
0
-
0
-
ns
ns
t
CK
t
CK
t
CK
ns
ns
ns
DQS-in hold time
0.35
- 0.35 -
DQS write postamble
0.4
0.6
0.4
0.6
DQS in high level pulse width
0.4
0.6
0.4
0.6
DQS in low level pulse width
0.4
0.6
0.4
0.6
Address and Control input setup time
0.9
-
1.0
-
DQ & DM setup time to DQS
0.45
-
0.5
-
DQ & DM hold time to DQS
0.45
-
tCLMIN
0.5
-
tCLMIN
t
HP
Clock half period
or
-
or
-
ns
tCHMIN
tCHMIN
t
QH
Output DQS valid window
tHP- - tHP - -
0.45 0.5
ns
t
RC
t
RFC
t
RAS
t
RCDRD
t
RCDWR
t
RP
t
RRD
tw
R
Row cycle time
15
-
12
-
t
CK
t
CK
Refresh row cycle time
17
-
14
-
100K
t
CK
Row active time
10
100K
8
RAS# to CAS# Delay in Read
5
-
4
-
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
RAS# to CAS# Delay in Write
3
-
2
-
Row precharge time
3
-
3
-
Row active to Row active delay
3
-
2
-
Write recovery time
3
-
2
-
t
CDLR
Last data in to Read command 2 -
t
CCD
Col. Address to Col. Address delay
t
MRD
Mode register set cycle time
t
DAL
Auto precharge write recovery + Precharge
t
XSA
Self refresh exit to read command delay
2
-
1
-
1
-
2
-
2
-
8
-
7
-
200
-
200
-
t
PDEX
Power down exit time
tIS + 2tCK
-
tIS + 2tCK
-
ns
t
REF
Refresh interval time -
7.8
7.8
us
(VDD = 2.5V
+/-
5%, Ta = 0~70
°
C)
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