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參數(shù)資料
| 型號： | IC42S32800-6TI |
| 英文描述： | 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
| 中文描述： | 200萬× 32位× 4個銀行（256兆）內(nèi)存 |
| 文件頁數(shù)： | 2/62頁 |
| 文件大?。?/td> | 879K |
| 代理商： | IC42S32800-6TI |
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IC42S32800
IC42S32800L
2
Integrated Circuit Solution Inc.
DR046-0B 12/21/2004
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. Copyright 2000, Integrated Circuit Solution Inc.
2M Words x 32 Bits x 4 Banks (256-MBIT)
SYNCHRONOUS DYNAMIC RAM
FEATURES
· Concurrent auto precharge
· Clock rate:166/143 MHz
· Fully synchronous operation
· Internal pipelined architecture
· Four internal banks (2M x 32bit x 4bank)
· Programmable Mode
-CAS#Latency:2 or 3
-Burst Length:1,2,4,8,or full page
-Burst Type:interleaved or linear burst
-Burst-Read-Single-Write
· Burst stop function
· Individual byte controlled by DQM0-3
· Auto Refresh and Self Refresh
· 4096 refresh cycles/64ms (15.6
μ
s/row)
· Single +3.3V ±0.3V power supply
· Interface:LVTTL
· Package: 86 Pin TSOP-2,0.50mm Pin Pitch
8x13mm, 90 Ball BGA, Ball pitch 0.8mm
· Pb-free package is available.
DESCRIPTION
The
ICSI
IC42S32800 and IC42S32800L is a high-speed
CMOS configured as a quad 2M x 32 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal,CLK).
Each of the 2M x 32 bit banks is organized as 4096 rows
by 512 columns by 32 bits.Read and write accesses start
at a selected locations in a programmed sequence.
Accesses begin with the registration of a BankActive
command which is then followed by a Read or Write
command
The
ICSI
IC42S32800 and IC42S32800L provides for
programmable Read or Write burst lengths of 1,2,4,8,or
full page, with a burst termination operation. An auto
precharge function may be enable to provide a self-timed
row precharge that is initiated at the end of the burst
sequence.The refresh functions,either Auto or Self
Refresh are easy to use.
By having a programmable mode register,the system
can choose the most suitable modes to maximize its
performance.
These devices are well suited for applications requiring
high memory bandwidth.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IC42S32800-6TIG | 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S32800-7B | 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S32800-7BG | 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S32800-7BI | 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S32800-7BIG | 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC42S32800-6TIG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S32800-7B | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S32800-7BG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S32800-7BI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S32800-7BIG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
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