- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360719 > IC42S32800-6BG 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM PDF資料下載
參數(shù)資料
| 型號： | IC42S32800-6BG |
| 英文描述： | 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
| 中文描述： | 200萬× 32位× 4個銀行（256兆）內(nèi)存 |
| 文件頁數(shù)： | 20/62頁 |
| 文件大?。?/td> | 879K |
| 代理商： | IC42S32800-6BG |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁當(dāng)前第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁
IC42S32800
IC42S32800L
20
Integrated Circuit Solution Inc.
DR046-0B 12/21/2004
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
DD
V
DDQ
V
I
V
O
I
O
P
D
T
OPT
T
STG
Supply Voltage (with respect to V
SS
)
Supply Voltage for Output (with respect to V
SSQ
)
Input Voltage
(with respect to V
SS
)
Output Voltage
(with respect to V
SSQ
)
Short circuit output current
Power Dissipation (
T
A
= 25 °C)
Operating Temperature
Storage Temperature
–0.5 to +4.6
–0.5 to +4.6
–0.5 to V
DD
+0.5
–1.0 to V
DDQ
+0.5
50
1
0 to +70
–65 to +150
V
V
V
V
mA
W
°C
°C
Notes:
1. Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant
to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute
Maximum Rating conditions for extended periods may affect device reliability.
DC RECOMMENDED OPERATING CONDITIONS
(
At T
A
= 0 to +70°C unless otherwise noted)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
DD
V
DDQ
V
IH
V
IL
Supply Voltage
Supply Voltage for DQ
High Level Input Voltage (all Inputs)
Low Level Input Voltage (all Inputs)
3.0
3.0
2.0
-1.2
3.3
3.3
—
—
3.6
3.6
V
V
V
V
V
DD
+ 1.2
+0.8
Notes:
1. All voltages are referenced to V
SS
=0V
2. V
IH
(max) for pulse width with
≤
3ns of duration
3. V
IL
(min) for pulse width with
≤
3ns of duration
CAPACITANCE CHARACTERISTICS
(At T
A
= 0 ~ 70°C, V
DD
= V
DDQ
= 3.3 ± 0.3V, V
SS
= V
SSQ
= 0V , unless otherwise note
d
)
Symbol
Parameter
Min.
Max.
Unit
C
IN
C
CLK
C
I
/
O
Input Capacitance, address & control pin
I
nput Capacitance, CLK pin
Data Input/Output Capacitance
1.5
1.5
3.0
3.0
3.0
5.5
pF
pF
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IC42S32800-6BI | 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S32800-6BIG | 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S32800-6T | 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S32800-6TG | 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S32800-6TI | 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC42S32800-6BI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S32800-6BIG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S32800-6T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S32800-6TG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S32800-6TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:2M x 32 Bit x 4 Banks (256-MBIT) SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。