參數(shù)資料
型號(hào)： IC42S32400L-6BG
英文描述： 1M x 32 Bit x 4 Banks (128-MBIT) SDRAM
中文描述： 100萬(wàn)× 32位× 4個(gè)銀行（128兆）內(nèi)存
文件頁(yè)數(shù)： 13/62頁(yè)
文件大?。?/td> 899K
代理商： IC42S32400L-6BG
IC42S32400
IC42S32400L
Integrated Circuit Solution Inc.
DR038-0C 02/01/2005
13
DON T CARE
CLK
DQ
D
OUT
a
T2
T1
T4
T3
T6
T5
T0
COMMAND
READ - AP
BANK n
NOP
NOP
NOP
NOP
D
OUT
a + 1
D
OUT
d
D
OUT
d + 1
NOP
T7
BANK n
CAS Latency = 3 (BANK m)
BANK m
ADDRESS
Idle
NOP
NOTE: DQM is LOW.
BANK n,
COL a
BANK m,
COL d
READ - AP
BANK m
Internal
States
t
Page Active
READ with Burst of 4
Interrupt Burst, Precharge
Page Active
READ with Burst of 4
Precharge
RP - BANK
n
tRP - BANK m
CAS Latency = 3 (BANK n)
6
Concurrent Auto Precharge
An access command (READ or WRITE) to another bank while an access command with auto precharge enabled
is executing is not allowed by SDRAMs, unless the SDRAM supports CONCURRENT AUTO PRECHARGE.
ICSI SDRAMs support CONCURRENT AUTO PRECHARGE. Four cases where CONCURRENT AUTO
PRECHARGE occurs are defined below.
READ with Auto Precharge
· Interrupted by a READ (with or without auto precharge): A READ to bank m will interrupt a READ on bank n,
CAS latency later. The PRECHARGE to bank n will begin when the READ to bank m is regis-tered.
READ With Auto Precharge Interrupted by a READ
· Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will interrupt a READ on bank n
when registered. DQM should be used two clocks prior to the WRITE command to prevent bus contention. The
PRECHARGE to bank n will begin when the WRITE to bank m is registered.
READ With Auto Precharge Interrupted by a WRITE
CLK
DQ
D
OUT
a
T2
T1
T4
T3
T6
T5
T0
COMMAND
NOP
NOP
NOP
NOP
D
IN
d + 1
D
IN
d
D
IN
d + 2
D
IN
d + 3
NOP
T7
BANK n
BANK m
ADDRESS
Idle
NOP
DQM
NOTE: 1. DQM is HIGH at T2 to prevent D
OUT
-a+1 from contending with D
IN
-d at T4.
BANK n,
COL a
BANK m,
COL d
WRITE - AP
BANK m
Internal
States
t
Page
Active
READ with Burst of 4
Interrupt Burst, Precharge
Page Active
WRITE with Burst of 4
Write-Back
RP -
BANK
n
tWR -
BANK
m
CAS Latency = 3 (BANK n)
READ - AP
BANK n
1
DON’T CARE
相關(guān)PDF資料
PDF描述
IC42S32400L-6BI 1M x 32 Bit x 4 Banks (128-MBIT) SDRAM
IC42S32400 1M x 32 Bit x 4 Banks (128-MBIT) SDRAM
IC42S32400-6B 1M x 32 Bit x 4 Banks (128-MBIT) SDRAM
IC42S32400-6BG 1M x 32 Bit x 4 Banks (128-MBIT) SDRAM
IC42S32400-6BI 1M x 32 Bit x 4 Banks (128-MBIT) SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IC42S32400L-6BI 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:1M x 32 Bit x 4 Banks (128-MBIT) SDRAM
IC42S32400L-6BIG 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:1M x 32 Bit x 4 Banks (128-MBIT) SDRAM
IC42S32400L-6T 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:1M x 32 Bit x 4 Banks (128-MBIT) SDRAM
IC42S32400L-6TG 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:1M x 32 Bit x 4 Banks (128-MBIT) SDRAM
IC42S32400L-6TI 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:1M x 32 Bit x 4 Banks (128-MBIT) SDRAM
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