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| 型號(hào)： | IC42S16400A-7TI |
| 英文描述： | 1M x 16Bit x 4 Banks (64-MBIT) SDRAM |
| 中文描述： | 100萬(wàn)× 16 × 4銀行（64兆位）內(nèi)存 |
| 文件頁(yè)數(shù)： | 2/67頁(yè) |
| 文件大?。?/td> | 1072K |
| 代理商： | IC42S16400A-7TI |
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IC42S16400A
2
Integrated Circuit Solution Inc.
DR039-0A 02/19/2004
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. Copyright 2000, Integrated Circuit Solution Inc.
FEATURES
Single 3.3V (
±
0.3V) power supply
High speed clock cycle time -6: 166MHz,
-7: 133MHz<3-3-3>
Fully synchronous operation referenced to clock
rising edge
Possible to assert random column access in
every cycle
Quad internal banks contorlled by A12 & A13
(Bank Select)
Byte control by LDQM and UDQM for
IC42S16400A
Programmable Wrap sequence (Sequential /
Interleave)
Programmable burst length (1, 2, 4, 8 and full
page)
Programmable
CAS
latency (2 and 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
LVTTL compatible inputs and outputs
4,096 refresh cycles / 64ms
Burst termination by Burst stop and Precharge
command
Package 400mil 54-pin TSOP-2 and 60ball(64M)
VF-BGA
Pb(lead)-free package is available
DESCRIPTION
The IC42S16400A are high-speed 67,108,864-bit syn-
chronous dynamic random-access memories, orga-
nized as 1,048,576 x 16 x 4 (word x bit x bank),
respectively.
The synchronous DRAMs achieved high-speed data
transfer using the pipeline architecture and clock
frequency up to 166MHz for -6. All input and outputs are
synchronized with the positive edge of the clock.The
synchronous DRAMs are compatible with Low Voltage
TTL (LVTTL).These products are packaged in 54-pin
TSOP-2 and 60ball(64M) VF-BGA.
1M x 16 Bits x 4 Banks (64-MBIT)
SYNCHRONOUS DYNAMIC RAM
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VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
VDD
LDQM
WE
CAS
RAS
CS
BA0
BA1
A10
A0
A1
A2
A3
VDD
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
VSS
NC
UDQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
VSS
PIN CONFIGURATIONS
54-Pin TSOP-2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IC42S16400A-7TIG | 1M x 16Bit x 4 Banks (64-MBIT) SDRAM |
| IC42S16800-8TI | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16800L-6TI(G) | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16800-7TIG | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16800L-7TIG | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC42S16400A-7TIG | 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:1M x 16Bit x 4 Banks (64-MBIT) SDRAM |
| IC42S16400F-5TL | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16400F-6TL | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16400F-7TL | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16800 | 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
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