參數(shù)資料
型號: IC42S16160-6TIG
英文描述: 4M x 16Bit x 4 Banks (256-MBIT) SDRAM
中文描述: 4米× 16 × 4銀行(256兆)內(nèi)存
文件頁數(shù): 63/69頁
文件大小: 1219K
代理商: IC42S16160-6TIG
IC42S16160
Integrated Circuit Solution Inc.
DR037-0A 9/05/2003
63
Full Page Write Cycle (2 of 2)
BS1=”L”, Bank C,D = Idle
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS
RAS
CAS
WE
A10
ADD
DQM
DQ
tCK3
Burst Length=Full Page, CAS Latency=3
Activate
Command
Bank A
Write
Hi-Z
Command
Bank A
Ra
DAa+1
The burst counter wraps
from the highest order
page address back to zero
during this time interval
Burst Stop
Command
CBank B
DAa
Full page burst operation
does not terminate when
the burst length is satisfied;
the burst counter increments
and continues bursting
beginning with the starting
address
Ra
tBDL
High
Activate
Command
Bank B
DAa+2 DAa+3 DAa-1
DAa
DAa+1
DBa
DBa+1 DBa+2 DBa+3 DBa+4 DBa+5
Activate
Bank B
Precharge
Command
Bank B
Ra
Rb
Ca
Ra
Ca
Rb
Data is ignored.
*BS0
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