- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄362808 > IC42S16101-7TG 512K x 16 Bit x 2 Banks (16-MBIT) SDRAM PDF資料下載
參數(shù)資料
| 型號： | IC42S16101-7TG |
| 英文描述： | 512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
| 中文描述： | 為512k × 16位× 2銀行（16兆）內(nèi)存 |
| 文件頁數(shù)： | 6/78頁 |
| 文件大?。?/td> | 786K |
| 代理商： | IC42S16101-7TG |
第1頁第2頁第3頁第4頁第5頁當(dāng)前第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁
IC42S16101
6
Integrated Circuit Solution Inc.
DR025-0F 01/17/2005
DC ELECTRICAL CHARACTERISTICS
(Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
0V
≤
V
IN
≤
V
CC
, with pins other than
the tested pin at 0V
Output is disabled
0V
≤
V
OUT
≤
V
CC
I
OUT
= –2 mA
I
OUT
= +2 mA
Speed
Min.
Max.
Unit
I
IL
Input Leakage Current
–5
5
μA
I
OL
Output Leakage Current
–10
10
μA
V
OH
V
OL
Output High Voltage Level
Output Low Voltage Level
2.4
—
—
0.4
V
V
I
CC
1
Operating Current
(1,2)
One Bank Operation,
Burst Length=1
t
RC
≥
t
RC
(min.)
I
OUT
= 0mA
CKE
≤
V
IL
(
MAX
)
CAS
latency = 3
-5
-6
-7
—
—
—
150
145
140
mA
mA
mA
I
CC
2
Precharge Standby Current
(In Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
t
CK
= t
CK
(
MIN
)
—
—
2
mA
I
CC
3
CKE
≥
V
IH
(
MIN
)
t
CK
= t
CK
(
MIN
)
—
—
—
-5
-6
-7
-5
-6
-7
—
—5
—6
—7
—
—
—
—
—
—
—
50
45
40
150
140
130
100
90
80
1
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
I
CC
4
Operating Current
(In Burst Mode)
(1)
t
CK
= t
CK
(
MIN
)
I
OUT
= 0mA
I
CC
5
Auto-Refresh Current
t
RC
= t
RC
(
MIN
)
I
CC
6
Self-Refresh Current
CKE
≤
0.2V
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 μF should be inserted between Vcc and GND for each
memory chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc1 and Icc4 depend on the output load.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IC42S16101-7TI | 512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
| IC42S16101-7TIG | 512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
| IC42S16102 | 512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
| IC42S16102-5BG | 512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
| IC42S16102-5BIG | 512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC42S16101-7TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
| IC42S16101-7TIG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
| IC42S16102 | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
| IC42S16102-5BG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
| IC42S16102-5BIG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。