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參數(shù)資料
| 型號(hào)： | IC42S16100-6T |
| 英文描述： | 512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 為512k × 16位× 2組（16兆）同步動(dòng)態(tài)RAM |
| 文件頁(yè)數(shù)： | 8/78頁(yè) |
| 文件大小： | 789K |
| 代理商： | IC42S16100-6T |
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IC42S16100
8
Integrated Circuit Solution Inc.
DR024-0D 06/25/2004
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
Symbol Parameter
-5
-6
-7
Units
—
—
t
CAC
t
RCD
t
RAC
t
RC
t
RAS
t
RP
t
RRD
t
CCD
Clock Cycle Time
Operating Frequency
CAS
Latency
Active Command To Read/Write Command Delay Time
RAS
Latency (t
RCD
+ t
CAC
)
Command Period (REF to REF / ACT to ACT)
Command Period (ACT to PRE)
Command Period (PRE to ACT)
Command Period (ACT[0] to ACT [1])
Column Command Delay Time
(READ, READA, WRIT, WRITA)
Input Data To Precharge Command Delay Time
Input Data To Active/Refresh Command Delay Time
(During Auto-Precharge)
Burst Stop Command To Output in HIGH-Z Delay Time
(Read)
Burst Stop Command To Input in Invalid Delay Time
(Write)
Precharge Command To Output in HIGH-Z Delay Time
(Read)
Precharge Command To Input in Invalid Delay Time
(Write)
Last Output To Auto-Precharge Start Time (Read)
DQM To Output Delay Time (Read)
DQM To Input Delay Time (Write)
Mode Register Set To Command Delay Time
5
6
7
ns
MHz
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
200
3
3
6
10
6
3
2
1
166
3
3
6
10
6
3
2
1
143
3
3
6
10
6
3
2
1
t
DPL
t
DAL
2
5
2
5
2
5
cycle
cycle
t
RBD
3
3
3
cycle
t
WBD
0
0
0
cycle
t
RQL
3
3
3
cycle
t
WDL
0
0
0
cycle
t
PQL
t
QMD
t
DMD
t
MCD
–2
2
0
2
–2
2
0
2
–2
2
0
2
cycle
cycle
cycle
cycle
AC TEST CONDITIONS
(Input/Output Reference Level: 1.4V)
I/O
50
+1.4V
30 pF
Z
O
= 50
Input
Output Load
2.4V
1.4V
0.4V
CLK
INPUT
OUTPUT
t
CHI
t
CH
t
AC
t
OH
t
CS
t
CK
t
CL
2.4V
1.4V
1.4V
1.4V
0.4V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IC42S16100-6TG | 512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16100-6TI | 512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16100-6TIG | 512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16100-7T | 512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16100-7TG | 512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC42S16100-6TG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16100-6TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16100-6TIG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16100-7T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16100-7TG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
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