參數(shù)資料
型號: IC41C82052-60T
英文描述: 2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
中文描述: 200萬× 8(16兆),充滿活力和快速頁面模式內(nèi)存
文件頁數(shù): 16/18頁
文件大?。?/td> 196K
代理商: IC41C82052-60T
IC41C82052
IC41LV82052
Integrated Circuit Solution Inc.
7
DR015-0A 06/12/2001
AC CHARACTERISTICS (Continued)(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
-60
Symbol
Parameter
Min.
Max.
Min.
Max.
Units
tACH
Column-Address Setup Time to CAS
15
15
ns
Precharge during WRITE Cycle
tOEH
OE Hold Time from WE during
8
10
ns
READ-MODI.Y-WRITE cycle(18)
tDS
Data-In Setup Time(15, 22)
0
ns
tDH
Data-In Hold Time(15, 22)
8
10
ns
tRWC
READ-MODI.Y-WRITE Cycle Time
108
133
ns
tRWD
RAS to WE Delay Time during
64
77
ns
READ-MODI.Y-WRITE Cycle(14)
tCWD
CAS to WE Delay Time(14, 20)
26
32
ns
tAWD
Column-Address to WE Delay Time(14)
39
47
ns
tPC
EDO Page Mode READ or WRITE
20
25
ns
Cycle Time
tRASP
RAS Pulse Width in EDO Page Mode
50
100K
60
100K
ns
tCPA
Access Time from CAS Precharge(15)
30
35
ns
tPRWC
EDO Page Mode READ-WRITE
56
68
ns
Cycle Time
tCOH
Data Output Hold after CAS LOW
5
ns
tO..
Output Buffer Turn-Off Delay from
0
12
0
15
ns
CAS or RAS(13,15,19, 24)
tWHZ
Output Disable Delay from WE
310
3
10
ns
tCSR
CAS Setup Time (CBR RE.RESH)(20, 25)
5
ns
tCHR
CAS Hold Time (CBR RE.RESH)( 21, 25)
8
10
ns
tORD
OE Setup Time prior to RAS during
0
0
ns
HIDDEN RE.RESH Cycle
tRE.
Auto Refresh Period
2,048 Cycles
32
32
ms
tT
Transition Time (Rise or .all)(2, 3)
150
1
50
ns
AC TEST CONDITIONS
Output load:
Two TTL Loads and 50 p. (Vcc = 5.0V + 10%)
One TTL Load and 50 p. (Vcc = 3.3V + 10%)
Input timing reference levels: VIH = 2.4V, VIL = 0.8V (Vcc = 5.0V + 10%)
VIH = 2.0V, VIL = 0.8V (Vcc = 3.3V + 10%)
Output timing reference levels: VOH = 2.0V, VOL = 0.8V (Vcc = 5.0V + 10%, 3.3V + 10%)
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