- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄353712 > IC41C44002-60JI 4Mx4 bit Dynamic RAM with EDO Page Mode PDF資料下載
參數(shù)資料
| 型號(hào)： | IC41C44002-60JI |
| 英文描述： | 4Mx4 bit Dynamic RAM with EDO Page Mode |
| 中文描述： | 4Mx4位動(dòng)態(tài)RAM與江戶頁(yè)面模式 |
| 文件頁(yè)數(shù)： | 17/20頁(yè) |
| 文件大小： | 236K |
| 代理商： | IC41C44002-60JI |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)當(dāng)前第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)
IC41C4400x and IC41LV4400x Series
6
Integrated Circuit Solution Inc.
DR007-0B 10/17/2002
ELECTRICAL CHARACTERISTICS(1)
(Recommended Operating Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
Speed Min.
Max.
Unit
IIL
Input Leakage Current
Any input 0V < VIN < Vcc
55
A
Other inputs not under test = 0V
IIO
Output Leakage Current
Output is disabled (Hi-Z)
55
A
0V < VOUT < Vcc
VOH
Output High Voltage Level
IOH =
5.0 mA with VCC=5V
2.4
V
IOH =
2.0 mA with VCC=3.3V
VOL
Output Low Voltage Level
IOL = 4.2 mA with VCC=5V
0.4
V
IOL = 2 mA with VCC=3.3V
ICC1
Standby Current: TTL
RAS, CAS
VIH
5V
2mA
3.3V
0.5
ICC2
Standby Current: CMOS
RAS, CAS > VCC
0.2V
5V
1mA
3.3V
0.5
ICC3
Operating Current:
RAS, CAS,
-50
120
mA
Random Read/Write(2,3,4)
Address Cycling, tRC = tRC (min.)
-60
110
Average Power Supply Current
ICC4
Operating Current:
RAS = VIL, CAS,
-50
90
mA
EDO Page Mode(2,3,4)
Cycling tPC = tPC (min.)
-60
80
Average Power Supply Current
ICC5
Refresh Current:
RAS Cycling, CAS > VIH
-50
120
mA
RAS-Only(2,3)
tRC = tRC (min.)
-60
110
Average Power Supply Current
ICC6
Refresh Current:
RAS, CAS Cycling
-50
120
mA
CBR(2,3,5)
tRC = tRC (min.)
-60
110
Average Power Supply Current
Notes:
1. An initial pause of 200 s is required after power-up followed by eight
RAS refresh cycles (RAS-Only or CBR) before proper device
operation is assured. The eight
RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded.
2. Dependent on cycle rates.
3. Specified values are obtained with minimum cycle time and the output open.
4. Column-address is changed once each EDO page cycle.
5. Enables on-chip refresh and address counters.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IC41C82052-60T | 2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS42LS16800A-10TI | Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:350VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to +85 C; Capacitance:2400uF RoHS Compliant: Yes |
| IS42LS16800A-7B | CAP 2400UF 450V ELECT SCREW TERM |
| IS42LS16800A-7BI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS16800A-7T | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC41C44002-60T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4Mx4 bit Dynamic RAM with EDO Page Mode |
| IC41C44002-60TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4Mx4 bit Dynamic RAM with EDO Page Mode |
| IC41C44002A | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IC41C44002A-50J | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IC41C44002A-50T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。