參數(shù)資料
型號(hào): IC41C44002-60J
英文描述: 4Mx4 bit Dynamic RAM with EDO Page Mode
中文描述: 4Mx4位動(dòng)態(tài)RAM與江戶頁(yè)面模式
文件頁(yè)數(shù): 16/20頁(yè)
文件大小: 236K
代理商: IC41C44002-60J
IC41C4400x and IC41LV4400x Series
Integrated Circuit Solution Inc.
5
DR007-0B 10/17/2002
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Rating
Unit
VT
Voltage on Any Pin Relative to GND
5V
1.0 to +7.0
V
3.3V
0.5 to +4.6
VCC
Supply Voltage
5V
1.0 to +7.0
V
3.3V
0.5 to +4.6
IOUT
Output Current
50
mA
PD
Power Dissipation
1
W
TA
Commercial Operation Temperature
0 to +70
oC
Industrial Operation Temperature
40 to +85
oC
TSTG
Storage Temperature
55 to +125
oC
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
5V
4.5
5.0
5.5
V
3.3V
3.0
3.3
3.6
VIH
Input High Voltage
5V
2.4
VCC + 1.0
V
3.3V
2.0
VCC + 0.3
VIL
Input Low Voltage
5V
1.0
0.8
V
3.3V
0.3
0.8
TA
Commercial Ambient Temperature
0
70
oC
Industrial Ambient Temperature
40
85
oC
CAPACITANCE(1,2)
Symbol
Parameter
Max.
Unit
CIN1
Input Capacitance: A0-A10(A11)
5
pF
CIN2
Input Capacitance:
RAS, CAS, WE, OE
7pF
CIO
Data Input/Output Capacitance: I/O0-I/O3
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25oC, f = 1 MHz.
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