參數資料
型號: IBMN612404GT3B
廠商: IBM Microeletronics
英文描述: 128Mb Double Data Rate Synchronous DRAM(128M位高速CMOS同步動態(tài)RAM(采用雙數據速率結構))
中文描述: 128Mb的雙數據速率同步DRAM(128兆位高速的CMOS同步動態(tài)隨機存儲器(采用雙數據速率結構))
文件頁數: 54/79頁
文件大?。?/td> 1324K
代理商: IBMN612404GT3B
IBMN612404GT3B
IBMN612804GT3B
128Mb Double Data Rate Synchronous DRAM
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 54 of 79
06K0566.F39350B
1/01
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will
1.7, for device drain to source voltages from 0.1 to 1.0.
6. The full variation in the ratio of the “typical” IBIS pullup to “typical” IBIS pulldown current should be unity +
10%, for device drain to source voltages from 0.1 to 1.0. This specification is a design objective only. It is
not guaranteed.
7. These characteristics are intended to obey the SSTL_2 class II standard.
8. This specification is intended for DDR SDRAM only.
not exceed
Normal Strength Driver Pullup Characteristics
Maximum
Typical High
Typical Low
Minimum
V
OUT
(V)
2.7
0
0
-200
I
O
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