參數(shù)資料
型號: IBMN325164CT3
廠商: IBM Microeletronics
英文描述: 256Mb(16Mbit x 4 I/O x 4 Bank) Synchronous DRAM(256M位(16M位 x 4 I/O x 4 組)同步動態(tài)RAM)
中文描述: 256Mb的(16兆× 4的I / O × 4行)同步DRAM(256M位(1,600位× 4的I / O × 4組)同步動態(tài)RAM)的
文件頁數(shù): 18/66頁
文件大小: 1699K
代理商: IBMN325164CT3
IBMN325164CT3
IBMN325404CT3
256Mb Synchronous DRAM - Die Revision B
IBMN325804CT3
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 18 of 66
06K0608.F39375A
10/00
Burst Read with Auto-Precharge
Burst Read with Auto-Precharge
COMMAND
NOP
*
NOP
NOP
NOP
Auto-Precharge
t
RP
CK
T0
T2
T1
T3
T4
T5
T6
T7
T8
NOP
NOP
NOP
t
RP
*
t
CK2
,
DQs
CAS latency = 2
t
CK3
,
DQs
CAS latency = 3
Begin Auto-precharge
DOUT A
0
DOUT A
0
NOP
DOUT A
1
DOUT A
1
*
t
RP
is a function of clock cycle time and speed sort.
See the Clock Frequency and Latency table.
Bank can be reactivated at completion of t
RP
.
(Burst Length = 2, CAS Latency = 2, 3)
COMMAND
NOP
NOP
NOP
*
NOP
Auto-Precharge
t
RP
CK
T0
T2
T1
T3
T4
T5
T6
T7
T8
NOP
NOP
NOP
t
RP
*
t
CK2
,
DQs
CAS latency = 2
t
CK3
,
DQs
CAS latency = 3
Begin Auto-precharge
DOUT A
0
DOUT A
1
DOUT A
2
DOUT A
3
NOP
DOUT A
0
DOUT A
1
DOUT A
2
DOUT A
3
*
Bank can be reactivated at completion of t
RP
.
t
RP
is a function of clock cycle time and speed sort.
See the Clock Frequency and Latency table.
(Burst Length = 4, CAS Latency = 2, 3)
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