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參數(shù)資料
| 型號： | IBM13N8644HCC |
| 廠商： | IBM Microeletronics |
| 英文描述： | 8M x 64 One-Bank Unbuffered SDRAM Module(8M x 64 1組不帶緩沖同步動態(tài)RAM模塊) |
| 中文描述： | 8米× 64單銀行無緩沖內(nèi)存模組（8米× 64一組不帶緩沖同步動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 1/19頁 |
| 文件大?。?/td> | 361K |
| 代理商： | IBM13N8644HCC |
IBM13N8644HCC
IBM13N8734HCC
8M x 64/72 One-Bank Unbuffered SDRAM Module
19L7295.E93875B
12/99
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 19
Features
168-Pin Unbuffered 8-Byte Dual In-Line Memory
Module
8Mx64/72 Synchronous DRAM DIMM
Three speed sorts:
-260 and -360 for PC100 applications
-10 for 66MHz applications (typical)
Inputs and outputs are LVTTL (3.3V) compatible
Single 3.3V
±
0.3V Power Supply
Single Pulsed RAS interface
SDRAMs have 4 internal banks
Module has 1 bank
Fully Synchronous to positive Clock Edge
Data Mask for Byte Read/Write control
Auto Refresh (CBR) and Self Refresh
Automatic and controlled Precharge commands
Programmable Operation:
- CAS Latency: 2, 3
- Burst Type: Sequential or Interleave
- Burst Length: 1, 2, 4, 8, Full-Page
(Full-Page supports Sequential burst only)
- Operation: Burst Read and Write or Multiple
Burst Read with Single Write
Suspend Mode and Power Down Mode
12/9/2 Addressing (Row/Column/Bank)
4096 Refresh cycles distributed across 64ms
Serial Presence Detect
Card size: 5.25" x 1.375" x 0.106"
Gold contacts
SDRAMs in TSOP Type II Package
Description
IBM13N8644HCC / IBM13N8734HCC are unbuf-
fered 168-pin Synchronous DRAM Dual In-Line
Memory Modules (DIMMs) which are organized as
8Mx64 and 8Mx72 high-speed memory arrays. The
DIMMs use eight (8Mx64) or nine (8Mx72) 8Mx8
SDRAMs in 400mil TSOP II packages. The DIMMs
achieve high-speed data transfer rates of up to
100MHz by employing a prefetch/pipeline hybrid
architecture that supports the JEDEC 1N rule while
allowing very low burst power.
The -10 speed sort DIMMs comply with JEDEC
standards for 168-pin unbuffered SDRAM DIMMs.
The -260 and -360 speed sort DIMMs are compati-
ble with the Intel PC100 SDRAM unbuffered DIMM
specification.
All control, address, and data input/output circuits
are synchronized with the positive edge of the exter-
nally supplied clock inputs.
All inputs are sampled at the positive edge of each
externally supplied clock (CK0, CK2). Internal oper-
Card Outline
ating modes are defined by combinations of RAS,
CAS, WE, S0/S2, DQMB, and CKE0 signals. A
command decoder initiates the necessary timings
for each operation. A 14-bit address bus accepts
address information in a row/column multiplexing
arrangement.
Prior to any Access operation, the CAS latency,
burst type, burst length, and Burst operation type
must be programmed into the DIMM by address
inputs A0-A9 during the Mode Register Set cycle.
The DIMM uses serial presence detects imple-
mented via a serial EEPROM using the two-pin IIC
protocol. The first 128 bytes of serial PD data are
used by the DIMM manufacturer. The last 128 bytes
are available to the customer.
All IBM 168-pin DIMMs provide a high-performance,
flexible 8-byte interface in a 5.25" long space-saving
footprint. Related products include both EDO DRAM
and SDRAM unbuffered DIMMs in both non-parity
x64 and ECC-Optimized x72 configurations.
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