參數(shù)資料
型號(hào)： IBM13N32644JCA
廠商： IBM Microeletronics
英文描述： 32M x 64 Two-Bank Unbuffered SDRAM Module(32M x 64 2組不帶緩的沖同步動(dòng)態(tài)RAM模塊)
中文描述： 32M的× 64雙行緩沖內(nèi)存模組（32M的× 64 2組不帶緩的沖同步動(dòng)態(tài)內(nèi)存模塊）
文件頁(yè)數(shù)： 1/18頁(yè)
文件大?。?/td> 517K
代理商： IBM13N32644JCA
IBM13N32644JCA
IBM13N32734JCA
32M x 64/72 Two-Bank Unbuffered SDRAM Module
09K3540.F38351
8/99
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 18
Features
168-Pin Unbuffered 8-Byte Dual In-Line Memory
Module
32Mx64/72 Synchronous DRAM DIMM
Two speed sorts:
-260 and -360 for PC100 applications
Inputs and outputs are LVTTL (3.3V) compatible
Single 3.3V
±
0.3V Power Supply
Single Pulsed RAS interface
SDRAMs have 4 internal banks
Module has 2 physical banks
Fully Synchronous to positive Clock Edge
Data Mask for Byte Read/Write control
Auto Refresh (CBR) and Self Refresh
Automatic and controlled Precharge commands
Programmable Operation:
- CAS Latency: 2, 3
- Burst Type: Sequential or Interleave
- Burst Length: 1, 2, 4, 8, Full-Page (Full-
Page supports Sequential burst only)
- Operation: Burst Read and Write or Multiple
Burst Read with Single Write
Suspend Mode and Power Down Mode
12/10/2 Addressing (Row/Column/Bank)
4096 Refresh cycles distributed across 64ms
Serial Presence Detect
Card size: 5.25" x 1.375" x 0.158" max
Gold contacts
SDRAMs in TSOP Type II Package
Description
IBM13N32644JCA / IBM13N32734JCA are unbuf-
fered 168-pin Synchronous DRAM Dual In-Line
Memory Modules (DIMMs) which are organized as
32Mx64 and 32Mx72 high-speed memory arrays
and are configured as two 16Mx64/72 physical
banks. The DIMMs use sixteen (32Mx64) or eigh-
teen (32Mx72) 16Mx8 SDRAMs in 400mil TSOP II
packages. The DIMMs achieve high-speed data-
transfer rates of up to 100MHz by employing a
prefetch/pipeline hybrid architecture that supports
the JEDEC 1N rule while allowing very low burst
power.
The -260 and -360 speed sort DIMMs are compati-
ble with the Intel PC100 SDRAM unbuffered DIMM
specification.
All control, address, and data input/output circuits
are synchronized with the positive edge of the exter-
nally supplied clock inputs.
All inputs are sampled at the positive edge of each
externally supplied clock (CK0 - CK3). Internal oper-
ating modes are defined by combinations of RAS,
CAS, WE, S0-S3, DQMB, and CKE0-CKE1 signals.
A command decoder initiates the necessary timings
for each operation. A 14-bit address bus accepts
address information in a row/column multiplexing
arrangement.
Prior to any Access operation, the CAS latency,
burst type, burst length, and burst operation type
must be programmed into the DIMM by address
inputs A0-A9 during the Mode Register Set cycle.
The DIMM uses serial presence detects imple-
mented via a serial EEPROM using the two pin IIC
protocol. The first 128 bytes of serial PD data are
used by the DIMM manufacturer. The last 128 bytes
are available to the customer.
All IBM 168-pin DIMMs provide a high-performance,
flexible 8-byte interface in a 5.25” long space-saving
footprint. Related products include both EDO DRAM
and SDRAM unbuffered DIMMs in both non-parity
x64 and ECC-Optimized x72 configurations.
Card Outline
1
85
10
94
11
95
40
124
41
125
84
168
(Front)
(Back)
.
相關(guān)PDF資料
PDF描述
IBM13N32734JCA 32M x 72 Two-Bank Unbuffered SDRAM Module(32M x 72 2組不帶緩沖的同步動(dòng)態(tài)RAM模塊)
IBM13N4644MCB 4M x 64 One-Bank Unbuffered SDRAM Module(4M x 64 1組不帶緩沖同步動(dòng)態(tài)RAM模塊)
IBM13N4734MCB 4M x 72 One-Bank Unbuffered SDRAM Module(4M x 72 1組不帶緩沖同步動(dòng)態(tài)RAM模塊)
IBM13N4644MC 4M x 64 1 Bank Unbuffered SDRAM Module(4M x 64 1組不帶緩沖同步動(dòng)態(tài)RAM模塊)
IBM13N4734MC 4M x 72 1 Bank Unbuffered SDRAM Module(4M x 72 1組不帶緩沖同步動(dòng)態(tài)RAM模塊)
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