參數(shù)資料
型號(hào)： IBM0117805M
廠商： IBM Microeletronics
英文描述： 2M x 8 11/10 EDO DRAM(16M位 動(dòng)態(tài)RAM（超頁(yè)面模式讀寫(xiě)并帶21條地址線，其中11條為行地址選通，10條為列地址選通）)
中文描述： 200萬(wàn)× 8 11/10 EDO公司的DRAM（1,600位動(dòng)態(tài)隨機(jī)存儲(chǔ)器（超頁(yè)面模式讀寫(xiě)并帶21條地址線，其中11條為行地址選通，10條為列地址選通））
文件頁(yè)數(shù)： 1/31頁(yè)
文件大?。?/td> 559K
代理商： IBM0117805M
IBM0117805
IBM0117805B IBM0117805P
2M x 8 11/10 EDO DRAM
IBM0117805M
28H4724
SA14-4221-06
Revised 4/97
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 31
Features
2,097,152 word by 8 bit organization
Single 3.3V
±
0.3V or 5.0V
±
0.5V power supply
Standard Power (SP) and Low Power (LP)
2048 Refresh Cycles
- 32 ms Refresh Rate (SP version)
- 128 ms Refresh Rate (LP version)
High Performance:
-50
-60
Units
t
RAC
RAS Access Time
50
60
ns
t
CAC
CAS Access Time
13
15
ns
t
AA
Column Address Access Time
25
30
ns
t
RC
Cycle Time
84
104
ns
t
HPC
EDO (Hyper Page) Mode Cycle Time
20
25
ns
Low Power Dissipation
- Active (max) - 75 mA / 60 mA
- Standby: TTL Inputs (max) - 1.0 mA
- Standby: CMOS Inputs (max)
- 1.0 mA (SP version)
- 0.1 mA (LP version)
- Self Refresh (LP version only)
- 200
μ
A (3.3 Volt)
- 300
μ
A (5.0 Volt)
Extended Data Out (Hyper Page) Mode
Read-Modify-Write
RAS Only and CAS before RAS Refresh
Hidden Refresh
Package: TSOP-II 28 (400mil x 725mil)
SOJ 28 (300mil)
Description
The IBM0117805 is a dynamic RAM organized
2,097,152 words by 8 bits, which has a very low
“sleep mode” power consumption option. These
devices are fabricated in IBM’s advanced 0.5
μ
m
CMOS silicon gate process technology. The circuit
and process have been carefully designed to pro-
vide high performance, low power dissipation, and
high reliability. The devices operate with a single
3.3V
±
0.3V or 5.0V
±
0.5V power supply. The 21
addresses required to access any bit of data are
multiplexed (11 are strobed with RAS, 10 are
strobed with CAS).
Pin Assignments
(Top View)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vss
I/O7
I/O6
I/O5
I/O4
CAS
OE
A9
A8
A7
A6
A5
A4
Vss
Vcc
I/O0
I/O1
I/O2
I/O3
WE
RAS
NC
A10
A0
A1
A2
A3
Vcc
Pin Description
RAS
Row Address Strobe
CAS
Column Address Strobe
WE
Read/Write Input
A0 - A10
Address Inputs
OE
Output Enable
I/O0 - I/O7
Data Input/Output
V
CC
Power (+3.3V or +5.0V)
V
SS
Ground
IBM01178052M x 811/10, 5.0V, EDO. IBM0117805P2M x 811/10, 3.3V, EDO, LP, SR. IBM0117805M2M x 811/10, 5.0V, EDO, LP, SR. IBM0117805B2M x 811/10, 3.3V, EDO.
Discontinued (9/98 - last order; 3/99 last ship)
相關(guān)PDF資料
PDF描述
IBM0117805P 2M x 8 11/10 EDO DRAM(16M位 動(dòng)態(tài)RAM（超頁(yè)面模式讀寫(xiě)并帶21條地址線，其中11條為行地址選通，10條為列地址選通）)
IBM0118160 1M x 16 10/10 DRAM(16M位 動(dòng)態(tài)RAM（帶20條地址線，其中10條為行地址選通，10條為列地址選通）)
IBM0118160B 1M x 16 10/10 DRAM(16M位 動(dòng)態(tài)RAM（帶20條地址線，其中10條為行地址選通，10條為列地址選通）)
IBM0118160M 1M x 16 10/10 DRAM(16M位 動(dòng)態(tài)RAM（帶20條地址線，其中10條為行地址選通，10條為列地址選通）)
IBM0118160P 1M x 16 10/10 DRAM(16M位 動(dòng)態(tài)RAM（帶20條地址線，其中10條為行地址選通，10條為列地址選通）)
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