參數(shù)資料
型號： I882
廠商： DC Components Co., Ltd.
英文描述： TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
中文描述： 技術(shù)規(guī)格晶體管瑞展
文件頁數(shù)： 1/1頁
文件大?。?/td> 85K
代理商： I882
I882
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Pinning
1 = Base
2 = Collector
3 = Emitter
Description
Designed for use in output stage of 10W audio
amplifier, voltage regulator, DC-DC converter,
and relay driver.
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation(T
C
=25
o
C)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
D
T
J
T
STG
Rating
40
30
5
3
7
600
10
+150
-55 to +150
Unit
V
V
V
A
A
mA
W
o
C
o
C
Absolute Maximum Ratings
(T
A
=25
o
C)
TO-251
Dimensions in inches and (millimeters)
.284(7.20)
.268(6.80)
.217(5.50)
.205(5.20)
.268(6.80)
.252(6.40)
(.256
(.035
(.032
(.181
.095(2.40)
.087(2.20)
.059(1.50)
.035(0.90)
.024(0.60)
.018(0.45)
.022(0.55)
.018(0.45)
.063(1.60)
.055(1.40)
1
2
3
2
Characteristic
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE1
h
FE2
f
T
C
ob
Min
40
30
5
-
-
-
-
30
100
-
-
Typ
-
-
-
-
-
0.3
1
-
-
90
45
Max
-
-
-
1
1
0.5
2
-
500
-
-
Unit
V
V
V
μ
A
μ
A
V
V
-
-
MHz
pF
Test Conditions
I
C
=100
μ
A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10
μ
A, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=3V, I
C
=0
I
C
=2A, I
B
=0.2A
I
C
=2A, I
B
=0.2A
I
C
=20mA, V
CE
=2V
I
C
=1A, V
CE
=2V
I
C
=0.1A, V
CE
=5V, f=100MHz
V
CB
=10V, f=1MHz
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(
1)
Base-Emitter Saturation Voltage
(
1)
DC Current Gain
(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
380
μ
s, Duty Cycle
2%
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
Rank
Range
Q
P
E
100~200
160~320
250~500
Classification of h
FE2
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