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參數(shù)資料
| 型號(hào)： | HZS36NB1 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 32.965 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| 封裝： | MHD, 2 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 31K |
| 代理商： | HZS36NB1 |
HZS-N Series
Electrical Characteristics (Ta = 25
°C) (cont)
Zener Voltage
Reverse Current
Dynamic Resistance
V
Z (V)*
Test
Condition
I
R (A)
Test
Condition
r
d ()
Test
Condition
Type
Grade
Min
Max
I
Z (mA)
Max
V
R (V)
Max
I
Z (mA)
HZS6.8N
B1
6.32
6.59
5
2
3.5
25
5
B2
6.52
6.79
B3
6.70
6.97
HZS7.5N
B1
6.88
7.19
5
0.5
4.0
25
5
B2
7.11
7.41
B3
7.33
7.64
HZS8.2N
B1
7.56
7.90
5
0.5
5.0
20
5
B2
7.82
8.15
B3
8.07
8.41
HZS9.1N
B1
8.33
8.70
5
0.5
6.0
20
5
B2
8.61
8.99
B3
8.89
9.29
HZS10N
B1
9.19
9.59
5
0.2
7.0
20
5
B2
9.48
9.90
B3
9.82
10.30
HZS11N
B1
10.18
10.63
5
0.2
8.0
20
5
B2
10.50
10.95
B3
10.82
11.26
HZS12N
B1
11.13
11.63
5
0.2
9.0
25
5
B2
11.50
11.92
B3
11.80
12.30
HZS13N
B1
12.18
12.71
5
0.2
10
25
5
B2
12.59
13.16
B3
13.03
13.62
HZS15N
B1
13.48
14.09
5
0.2
11
25
5
B2
13.95
14.56
B3
14.42
15.02
HZS16N
B1
14.87
15.50
5
0.2
12
25
5
B2
15.33
15.96
B3
15.79
16.50
Note:
Tested with pulse (P
W = 40ms)
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PDF描述 |
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| HZS39NB2 | 36.275 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
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| HZU4.7B2TLF | 4.65 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HZS36NB2 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS36N-B2(TD-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| HZS36NB3 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS36NB4 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS39NB1 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
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