參數(shù)資料
型號: HZS-L
廠商: Renesas Technology Corp.
元件分類: 參考電壓二極管
英文描述: Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
中文描述: 250 的低電流運算,低反向泄露,低噪聲穩(wěn)壓二極管
文件頁數(shù): 2/5頁
文件大?。?/td> 28K
代理商: HZS-L
HZS-LL Series
Rev.1, Dec. 1996, page 2 of 5
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd
250
mW
Junction temperature
Tj
175
°C
Storage temperature
Tstg
–55 to +175
°C
Electrical Characteristics
(Ta = 25°C)
V
Z
(V)
*
Min
1
I
R
(nA)
Max
Z
ZT
(
)
Max
Z
ZK
(k
)
*
Typ
2
V
Z1
(V)
*
3
V
Z2
(V)
*
Max
3
Type
Grade
Max
I
Z
(mA)
0.5
V
R
(V)
0.5
I
ZT
(mA)
0.5
I
ZK
(
μ
A) Max
50
HZS2LL A
1.6
2.0
100
350
(1.2)
0.5
0.6
B
1.9
2.3
C
2.2
2.6
HZS3LL A
2.5
2.9
0.5
100
1.0
360
0.5
(1.2)
50
0.5
0.6
B
2.8
3.2
C
3.1
3.5
HZS4LL A
3.4
3.8
0.5
100
2.0
370
0.5
(1.5)
50
0.5
0.6
B
3.7
4.1
C
4.0
4.4
HZS5LL A
4.3
4.7
0.5
100
3.0
380
0.5
(1.5)
50
0.5
0.6
B
4.6
5.0
C
4.9
5.3
Note:
Note:
Note:
Note:
1. Tested with DC.
2. Reference only.
3.
V
Z1
= V
Z
(I
Z
= 0.5 mA) – V
Z1
(I
z
= 0.05 mA)
V
Z2
= V
Z1
(IZ = 0.05 mA) – V
Z2
(I
z
= 0.001 mA)
4. Type No. is as follows; HZS2ALL, HZS2BLL, HZS5CLL.
相關(guān)PDF資料
PDF描述
HZS-NSERIES
HZS-N Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
HZS16L Silicon Epitaxial Planar Zener Diode for Low Noise Application(低噪音應(yīng)用的平面外延齊納二極管)
HZS12L Silicon Epitaxial Planar Zener Diode for Low Noise Application(低噪音應(yīng)用的平面外延齊納二極管)
HZS18L Silicon Epitaxial Planar Zener Diode for Low Noise Application(低噪音應(yīng)用的平面外延齊納二極管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HZS-LL 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise
HZS-LLSERIES 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
HZS-LSERIES 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
HZS-N 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
HZS-NSERIES 制造商:未知廠家 制造商全稱:未知廠家 功能描述: