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參數(shù)資料
| 型號： | HZM6.8ZMWA |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Planar Zener Diode for Surge Absorb(用于浪涌電流吸收的平面外延齊納二極管) |
| 中文描述： | 硅平面穩(wěn)壓二極管的浪涌吸收（用于浪涌電流吸收的平面外延齊納二極管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 27K |
| 代理商： | HZM6.8ZMWA |
HZM6.8ZMWA
2
Absolute Maximum Ratings (Ta = 25
°
C)
Item
Symbol
Value
Unit
Power dissipation
Pd
*1
200
mW
Junction temperature
Tj
150
°
C
°
C
Storage temperature
Note
1. Four device total, See Fig.2.
Tstg
-55 to +150
Electrical Characteristics (Ta = 25
°
C)
*1
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Zener voltage
V
Z
I
R
C
6.47
—
7.00
V
I
Z
= 5 mA, 40ms pulse
V
R
= 3.5V
V
R
= 0V, f = 1 MHz
I
Z
= 5 mA
C =150pF, R = 330
, Both forward and
reverse direction 10 pulse
Reverse current
—
—
2
μ
A
Capacitance
—
—
25
pF
Dynamic resistance
r
d
—
—
—
30
ESD-Capability
*2@*3
20
—
—
kV
Notes
1. Per one device.
2. Failure criterion ; IR
>
2
μ
A at VR = 3.5V.
3. Between cathode and anode.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HZM68ZWA | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Zener Diode for Surge Absorb |
| HZM7.5FA | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Surge Absorb |
| HZM7.5N | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer |
| HZM7.5NB | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer |
| HZM7.5NB1 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer |
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