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參數(shù)資料
| 型號： | HZM6.8MWA |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 36K |
| 代理商： | HZM6.8MWA |
HZM6.2ZMFA
Rev.0, May. 2002, page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd
*
200
mW
Junction temperature
Tj
150
55 to +150
°C
Storage temperature
Note
:
Four device total, See Fig.2.
Tstg
°C
Electrical Characteristics *
1
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Zener voltage
V
Z
I
R
C
5.90
—
6.50
V
μ
A
I
Z
= 5 mA, 40 ms pulse
V
R
= 5.5 V
V
R
= 0 V, f = 1 MHz
I
Z
= 5 mA
C = 150 pF, R = 330
, Both forward and
reverse direction 10 pulse
Reverse current
—
—
3
Capacitance
—
—
8.5
pF
Dynamic resistance
r
d
—
—
—
60
ESD-Capability
*
2
13
—
—
kV
Notes
:
1. Per one device.
2. Failure criterion ; I
R
> 3
μ
A at V
R
= 5.5 V.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HZM68MWATL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Planar Zener Diode for Surge Absorb |
| HZM68ZMFA | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Planar Zener Diode for Surge Absorb |
| HZM68ZWA | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Zener Diode for Surge Absorb |
| HZM7.5FA | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Surge Absorb |
| HZM7.5N | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer |
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