參數資料
型號: HZM33NB1
廠商: Renesas Technology Corp.
元件分類: 參考電壓二極管
英文描述: Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
中文描述: 250 的低電流運算,低反向泄露,低噪聲穩(wěn)壓二極管
文件頁數: 4/10頁
文件大?。?/td> 37K
代理商: HZM33NB1
HZM-N Series
Electrical Characteristics
(Ta = 25
°
C) (cont)
Zener Voltage *
Reverse Current
Dynamic Resistance
Test
Condition
V
Z
(V)
Min
Test
Condition
I
R
(
μ
A)
Max
Test
Condition
r
d
(
)
Max
Type
Grade
Max
I
Z
(mA)
5
V
R
(V)
8.0
I
Z
(mA)
5
HZM11N
B
10.44
11.56
2
30
B1
10.44
10.88
B2
10.76
11.22
B3
11.10
11.56
HZM12N
B
11.42
12.60
5
2
9.0
35
5
B1
11.42
11.90
B2
11.74
12.24
B3
12.08
12.60
HZM13N
B
12.47
13.96
5
2
10.0
35
5
B1
12.47
13.03
B2
12.91
13.49
B3
13.37
13.96
HZM15N
B
13.84
15.52
5
2
11.0
40
5
B1
13.84
14.46
B2
14.34
14.98
B3
14.85
15.52
HZM16N
B
15.37
17.09
5
2
12.0
40
5
B1
15.37
16.01
B2
15.85
16.51
B3
16.35
17.09
HZM18N
B
16.94
19.03
5
2
13.0
45
5
B1
16.94
17.70
B2
17.56
18.35
B3
18.21
19.03
HZM20N
B
18.86
21.08
5
2
15.0
50
5
B1
18.86
19.70
B2
19.52
20.39
B3
20.21
21.08
Note:
Tested with pulse (P
W
= 40ms)
相關PDF資料
PDF描述
HZM33NB2 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
HZM33NB3 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
HZM36NB1 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
HZM13N Silicon Epitaxial Planar Zener Diode for Stabilizer(用于穩(wěn)壓的平面外延齊納二極管)
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相關代理商/技術參數
參數描述
HZM33NB2 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer
HZM33NB3 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer
HZM33NBTL-E 制造商:Renesas Electronics Corporation 功能描述:Cut Tape
HZM36N 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer
HZM36NB 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer