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參數(shù)資料
| 型號(hào)： | HZM3.3NBTL |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3.3 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | MPAK-3 |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 193K |
| 代理商： | HZM3.3NBTL |
HZM-N Series
Rev.5.00, Decl.14.2004, page 6 of 7
Main Characteristic
10
8
6
4
2
0
48
12
16
20
24
28
32
40
36
HZM6.8N
HZM12N
HZM15N
HZM18N
HZM2.0N
HZM20N
HZM
22N
HZM
33N
HZM36N
HZM
30N
HZM2.4N
HZM3.0N HZM3.6N
HZM4.3N HZM5.1N HZM6.2N
HZM7.5N HZM8.2N HZM9.1N HZM10N HZM1
1
N
HZM13N
HZM16N
HZM
24N
HZM
27N
0
5
10 15 20 25
–0.06
Zener
V
o
ltage
T
e
mperature
Coef
ficient
γ Z
(mV/
°C)
30 35 40 45
–0.05
–0.04
–0.03
–0.02
–0.01
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
–25
–20
–15
–10
–5
0
5
10
15
20
25
30
35
40
%/
°C
mV/
°C
250
200
150
100
50
200
150
100
50
0
Power
Dissipation
Pd
(mW)
Fig.3 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (
°C)
0
1.0mm
0.8mm
Printed circuit board
25 62 1.6t mm
Material:
Glass Epoxy Resin+Cu Foil
×
Cu Foil
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage VZ (V)
Zener
V
oltage
T
e
mperature
Coef
ficient
γ Z
(%/
°C)
0
Fig.1 Zener current vs. Zener voltage
Zener Voltage VZ (V)
Zener
Current
I
Z
(mA)
45
–30
–0.07
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HZM33NBTL-E | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape |
| HZM36N | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer |
| HZM36NB | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer |
| HZM36NB1 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer |
| HZM36NB2 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer |
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