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參數(shù)資料
| 型號： | HZM11NB2 |
| 廠商： | Renesas Technology Corp. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運(yùn)算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 193K |
| 代理商： | HZM11NB2 |
HZM-N Series
Rev.5.00, Decl.14.2004, page 3 of 7
Zener Voltage
V
Z
(V)*
1
Min
Max
5.86
6.53
5.86
6.12
6.06
6.33
6.26
6.53
6.47
7.14
6.47
6.73
6.65
6.93
6.86
7.14
7.06
7.84
7.06
7.36
7.28
7.60
7.52
7.84
7.76
8.64
7.76
8.10
8.02
8.36
8.28
8.64
8.56
9.55
8.56
8.93
8.85
9.23
9.15
9.55
9.45
10.55
9.45
9.87
9.77
10.21
10.11
10.55
10.44
11.56
10.44
10.88
10.76
11.22
11.10
11.56
11.42
12.60
11.42
11.90
11.74
12.24
12.08
12.60
12.47
13.96
12.47
13.03
12.91
13.49
13.37
13.96
13.84
15.52
13.84
14.46
14.34
14.98
14.85
15.52
15.37
17.09
15.37
16.01
15.85
16.51
16.35
17.09
16.94
19.03
16.94
17.70
17.56
18.35
18.21
19.03
Reverse Current
I
R
(
μ
A)
Max
2
Dynamic Resistance
r
d
(
)
Max
50
Test
Condition
I
Z
(mA)
5
Test
Condition
V
R
(V)
3.0
Test
Condition
I
Z
(mA)
5
Type
Grade
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
HZM6.2N
HZM6.8N
5
2
3.5
30
5
HZM7.5N
5
2
4.0
30
5
HZM8.2N
5
2
5.0
30
5
HZM9.1N
5
2
6.0
30
5
HZM10N
5
2
7.0
30
5
HZM11N
5
2
8.0
30
5
HZM12N
5
2
9.0
35
5
HZM13N
5
2
10.0
35
5
5M15N
5
2
11.0
40
5
HZM16N
5
2
12.0
40
5
HZM18N
5
2
13.0
45
5
Note: 1. Tested with pulse (P
W
= 40 ms)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HZM11NB2TL-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
| HZM11NB3 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer |
| HZM12N | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer |
| HZM12NB | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer |
| HZM12NB1 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer |
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