參數(shù)資料
型號： HZIP23-P-1.27H
廠商： Toshiba Corporation
英文描述： Intelligent Power Device High Voltage Monolithic Silicon Power IC
中文描述： 智能功率器件單片硅高壓功率IC
文件頁數(shù)： 8/21頁
文件大?。?/td> 240K
代理商： HZIP23-P-1.27H
TENTATIVE TPD4113K
2005-05-20
8
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
BB
50
280
450
Operating power supply voltage
V
CC
13.5
15
16.5
V
I
BB
V
BB
=
450 V
0
0.5
I
CC
V
CC
=
15 V
1.1
5
mA
I
BS (ON)
V
BS
=
15 V, high side ON
260
410
Current dissipation
I
BS (OFF)
V
BS
=
15 V, high side OFF
230
370
μ
A
V
IH
V
IN
=
“H”
3.5
Input voltage
V
IL
V
IN
=
“L”
1.5
V
I
IH
V
IN
=
5
150
Input current
I
IL
V
IN
=
0 V
100
μ
A
V
CEsat
H
V
CC
=
15 V, IC
=
0.5 A
2.3
3
Output saturation voltage
V
CEsat
L
V
CC
=
15 V, IC
=
0.5 A
2.3
3
V
V
F
H
IF
=
0.5 A, high side
1.6
2.0
FRD forward voltage
V
F
L
IF
=
0.5 A, low side
1.6
2.0
V
Regulator voltage
V
REG
IF
=
500
0.9
1.2
V
BSD forward voltage
V
F
(BSD)
V
CC
=
15 V, I
O
=
30 mA
6.5
7
7.5
V
Current limiting voltage
V
R
0.46
0.5
0.54
V
Current limiting dead time
Dt
2.3
3.3
4.4
s
Thermal shutdown temperature
TSD
V
CC
=
15 V
135
150
180
Thermal shutdown hysteresis
TSD
V
CC
=
15 V
50
V
CC
under voltage protection
V
CC
UVD
10
11
12
V
V
CC
under voltage protection recovery
V
CC
UVR
10.5
11.5
12.5
V
V
BS
under voltage protection
V
BS
UVD
8
9
9.5
V
V
BS
under voltage protection recovery
V
BS
UVR
8.5
9.5
10.5
V
DIAG saturation voltage
V
DIAGsat
I
DIAG
=5mA
0.5
V
Output on delay time
t
on
V
BB
=
280 V, IC
=
0.5 A
1.5
3
μ
s
Output off delay time
t
off
V
BB
=
280 V, IC
=
0.5 A
1.2
3
μ
s
Dead time
tdead
V
BB
=
280 V, IC
=
0.5 A
1.4
μ
s
FRD reverse recovery time
t
rr
V
BB
=
280 V, IC
=
0.5 A
200
ns
相關(guān)PDF資料
PDF描述
HZK6A Toggle Switch; Circuitry:DPDT; Switch Operation:On-Off-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Solder Lug; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:Panel; Features:Large Actuator RoHS Compliant: Yes
HZK6B SWITCH, 3PDT; Thread size:1/4 x 40UNS; Switch function type:3PDT On-On; Current, contact @ contact voltage AC max:3A; Current, contact @ contact voltage DC max:8A; Material, contact:Silver; Resistance, contact:10mR; Temp, op. RoHS Compliant: Yes
HZK30 Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode
HZK33 Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode
HZK36 Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HZK 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply
HZK11A 制造商:SEMTECH_ELEC 制造商全稱:SEMTECH ELECTRONICS LTD. 功能描述:SILICON EPITAXIAL PLANAR ZENER DIODES for Stabilized Power Supply
HZK11AL 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply
HZK11B 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply
HZK11BL 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply
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