參數(shù)資料
型號(hào): HYS72D32501GR-7-A
廠商: INFINEON TECHNOLOGIES AG
英文描述: Low Profile DDR SDRAM-Modules
中文描述: 超薄DDR內(nèi)存模塊
文件頁數(shù): 16/29頁
文件大小: 803K
代理商: HYS72D32501GR-7-A
HYS72D[16500/32501]GR-[7/8]-A
Low Profile Registered DDR SDRAM-Modules
Electrical Characteristics
Data Sheet
16
Rev. 1.2, 2004-06
10292003-DNYO-BD9L
Output Leakage Current
I
OZ
–5
5
μ
A
DQs are disabled;
0 V
V
OUT
V
DDQ
7)
V
OUT
= 1.95 V
7)
Output High Current,
Normal Strength Driver
Output Low
Current, Normal Strength
Driver
I
OH
–16.2
mA
I
OL
16.2
mA
V
OUT
= 0.35 V
7)
1) 0
°
C
T
A
70
°
C
2) Under all conditions,
V
DDQ
must be less than or equal to
V
DD
.
3) Peak to peak AC noise on
V
REF
may not exceed ± 2%
V
REF (DC)
.
V
REF
is also expected to track noise variations in
V
DDQ
.
4)
V
TT
is not applied directly to the device.
V
TT
is a system supply for signal termination resistors, is expected to be set equal
to
V
REF
, and must track variations in the DC level of
V
REF
.
5)
V
ID
is the magnitude of the difference between the input level on CK and the input level on CK.
6) The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire
temperature and voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the
maximum difference between pull-up and pull-down drivers due to process variation.
7) Inputs are not recognized as valid until
V
REF
stabilizes.
8) Values are shown per component
Table 8
Parameter
Electrical Characteristics and DC Operating Conditions
(cont’d)
Symbol
Min.
Values
Typ.
Unit Note/Test Condition
1)
Max.
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