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| 型號(hào)： | HYS64D32300GU-5-B |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 184-Pin Unbuffered Dual-In-Line Memory Modules |
| 中文描述： | 184引腳緩沖雙列內(nèi)存模組 |
| 文件頁(yè)數(shù)： | 17/51頁(yè) |
| 文件大小： | 1356K |
| 代理商： | HYS64D32300GU-5-B |
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Data Sheet
17
V1.1, 2003-07
HYS[64/72]D[16x01/32x00/64x20][G/E]U-[5/6/7/8]-B
Unbuffered DDR SDRAM Modules
Electrical Characteristics
3
Electrical Characteristics
3.1
Operating Conditions
Attention: Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded. Functional
operation should be restricted to recommended operation conditions. Exceeding only one of
these values for extended periods of time affect device reliability and may cause irreversible
damage to the integrated circuit.
Table 7
Parameter
Absolute Maximum Ratings
Symbol
Values
typ.
–
Unit
Note/ Test
Condition
min.
-0.5
max.
V
DDQ
+
0.5
+3.6
+3.6
+3.6
+70
+150
–
–
Voltage on I/O pins relative to
V
SS
V
IN
,
V
OUT
V
–
Voltage on Inputs relative to
V
SS
Voltage on
V
DD
supply relative to
V
SS
Voltage on
V
DDQ
supply relative to
V
SS
Operating Temperature (Ambient)
Storage Temperature
Power dissipation (per SDRAM component)
Short Circuit Output Current
V
IN
V
DD
V
DDQ
T
A
T
STG
P
D
I
OUT
-0.5
-0.5
-0.5
0
-55
–
–
–
–
–
–
–
1
50
V
V
V
°
C
°
C
W
mA
–
–
–
–
–
–
–
Table 8
Parameter
Supply Voltage Levels
Symbol
Limit Values
min.
2.3
2.5
2.3
2.5
0.49
×
V
DDQ
V
DDQ
/ 2 –50
mV
V
REF
– 0.04
2.3
Unit Note/ Test Condition
nom.
2.5
2.6
2.5
2.6
0.5
×
V
DDQ
0.51
×
V
DDQ
V
DDQ
/ 2
max.
2.7
2.7
2.7
2.7
Device Supply Voltage
Device Supply Voltage
Output Supply Voltage
Output Supply Voltage
Input Reference Voltage
Input Reference Voltage
V
DD
V
DD
V
DDQ
V
DDQ
V
REF
V
REF
V
V
V
V
V
V
f
CK
≤
166 MHz
f
CK
> 166 MHz
1)
f
CK
≤
166 MHz
2)
f
CK
> 166 MHz
1)2)
f
CK
≤
166 MHz
3)
f
CK
> 166 MHz
1)3)
1) DDR400 conditions apply for all clock frequencies above 166 MHz
2) Under all conditions,
V
DDQ
must be less than or equal to
V
DD
.
3) Peak to peak AC noise on
V
REF
may not exceed ± 2%
V
REF (DC)
.
V
REF
is also expected to track noise variations in
V
DDQ
.
4)
V
TT
of the transmitting device must track
V
REF
of the receiving device.
V
DDQ
/ 2 + 50
mV
V
REF
+ 0.04
3.6
Termination Voltage
EEPROM supply voltage
V
TT
V
DDSPD
V
REF
2.5
V
V
4)
—
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HYS64D32300GU-5-C | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:184-Pin Unbuffered Double Data Rate SDRAM |
| HYS64D32300GU-6-B | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:184-Pin Unbuffered Dual-In-Line Memory Modules |
| HYS64D32300GU-6-C | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:184-Pin Unbuffered Double Data Rate SDRAM |
| HYS64D32300HU-5-C | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:184-Pin Unbuffered Dual-In-Line Memory Modules |
| HYS64D32300HU-6-C | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:184-Pin Unbuffered Dual-In-Line Memory Modules |
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