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參數(shù)資料
| 型號： | HYM76V16C735HGT4 |
| 英文描述： | 16Mx72|3.3V|K/H|x18|SDR SDRAM - Registered DIMM 128MB |
| 中文描述： | 16Mx72 | 3.3 |鉀/ ? | x18 | SDRAM的特別提款權(quán)-注冊128MB的內(nèi)存 |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 147K |
| 代理商： | HYM76V16C735HGT4 |
PC133 SDRAM Unbuffered DIMM
Rev. 0. 3/ Apr. 01
9
HYM76V16635HGT8 Ser ies
DC CHARACTERISTICS I
(TA=0 to 70
°
C
, V
DD
=3.3
±
0.3V)
Note :
1.V
IN
= 0 to 3.6V, All other pins are not tested under V
IN
=0V
2.D
OUT
is disabled, V
OUT
=0 to 3.6
DC CHARACTERISTICS II
Note :
1. I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
Parame ter
Symbol
Mi n.
Max
Uni t
Not e
Input Leakage Current
I
LI
-16
16
uA
1
Output Leakage Current
I
LO
-1
1
uA
2
Output High Voltage
V
OH
2.4
-
V
I
OH
= -4mA
Output Low Voltage
V
OL
-
0.4
V
I
OL
= +4mA
Parame ter
Symbol
Test Condi t i on
Speed
Unit
Note
-K
-H
Operating Current
I
DD1
Burst length=1, One bank active
t
RC
≥
t
RC
(min), I
OL
=0mA
960
960
mA
1
Precharge Standby Current
in Power Down Mode
I
DD2P
CKE
≤
V
IL
(max), t
CK
= min
32
mA
I
DD2PS
CKE
≤
V
IL
(max), t
CK
=
∞
32
Precharge Standby Current
in Non Power Down Mode
I
DD2N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= min
Input signals are changed one time during
2clks. All other pins
≥
V
DD
-0.2V or
≤
0.2V
240
mA
I
DD2NS
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
240
Active Standby Current
in Power Down Mode
I
DD3P
CKE
≤
V
IL
(max), t
CK
= min
80
mA
I
DD3PS
CKE
≤
V
IL
(max), t
CK
=
∞
80
Active Standby Current
in Non Power Down Mode
I
DD3N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= min
Input signals are changed one time during
2clks. All other pins
≥
V
DD
-0.2V or
≤
0.2V
480
mA
I
DD3NS
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
480
Burst Mode Operating
Current
I
DD4
t
CK
≥
t
CK
(min), I
OL
=0mA
All banks active
CL=3
1200
1200
mA
1
CL=2
1200
1200
Auto Refresh Current
I
DD5
t
RRC
≥
t
RRC
(min), All banks active
3200
mA
2
Self Refresh Current
I
DD6
CKE
≤
0.2V
32
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYM76V16C735HGT4-H | x72 SDRAM Module |
| HYM76V16C735HGT4-K | x72 SDRAM Module |
| HYM76V16C755HGT4 | 16Mx72|3.3V|P/S|x18|SDR SDRAM - Registered DIMM 128MB |
| HYM76V16C755HGT4-8 | x72 SDRAM Module |
| HYM76V16C755HGT4-P | x72 SDRAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM76V16C735HGT4-H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HYM76V16C735HGT4-K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HYM76V16C755HGT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mx72|3.3V|P/S|x18|SDR SDRAM - Registered DIMM 128MB |
| HYM76V16C755HGT4-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HYM76V16C755HGT4-P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
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