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參數(shù)資料
| 型號(hào)： | HYM76V16735HGT8-K |
| 英文描述： | x72 SDRAM Module |
| 中文描述： | x72內(nèi)存模塊 |
| 文件頁(yè)數(shù)： | 1/13頁(yè) |
| 文件大小： | 147K |
| 代理商： | HYM76V16735HGT8-K |
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16Mx64bits
PC133 SDRAM Unbuffered DIMM
based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh
HYM76V16635HGT8 Series
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of
circuits described. No patent licenses are implied.
Rev. 0. 3/ Apr. 01
DESCRIPTION
The Hynix HYM76V16635AT8 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of sixteen 8Mx8bits
CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
printed circuit board. One 0.22uF and one 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB.
The Hynix HYM76V16635AT8 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 128Mbytes
memory. The Hyundai HYM76V16635AT8 Series are fully synchronous operation referenced to the positive edge of the clock . All
inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high
bandwidth.
FEATURES
PC133/PC100MHz support
168pin SDRAM Unbuffered DIMM
Serial Presence Detect with EEPROM
1.25” (31.75mm) Height PCB with double sided com-
ponents
Single 3.3
±
0.3V power supply
All device pins are compatible with LVTTL interface
Data mask function by DQM
SDRAM internal banks : four banks
Module bank : two physical bank
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4 or 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
ORDERING INFORMATION
Part No.
Cl ock
Frequency
I nternal
Bank
Ref.
Power
SDRAM
Package
Plating
HYM76V16635HGT8-K
133MHz
4 Banks
4K
Normal
TSOP-II
Gold
HYM76V16635HGT8-H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYM76V16755HGT8 | 16Mx72|3.3V|P/S|x18|SDR SDRAM - Unbuffered DIMM 128MB |
| HYM76V16C735HGT4 | 16Mx72|3.3V|K/H|x18|SDR SDRAM - Registered DIMM 128MB |
| HYM76V16C735HGT4-H | x72 SDRAM Module |
| HYM76V16C735HGT4-K | x72 SDRAM Module |
| HYM76V16C755HGT4 | 16Mx72|3.3V|P/S|x18|SDR SDRAM - Registered DIMM 128MB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM76V16755HGT8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mx72|3.3V|P/S|x18|SDR SDRAM - Unbuffered DIMM 128MB |
| HYM76V16C735HGT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mx72|3.3V|K/H|x18|SDR SDRAM - Registered DIMM 128MB |
| HYM76V16C735HGT4-H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HYM76V16C735HGT4-K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HYM76V16C755HGT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mx72|3.3V|P/S|x18|SDR SDRAM - Registered DIMM 128MB |
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