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參數(shù)資料
| 型號： | HYM75V32M636LT6 |
| 英文描述： | 32Mx64|3.3V|K/H|x4|SDR SDRAM - SO DIMM 256MB |
| 中文描述： | 32Mx64 | 3.3 |鉀/ ? | x4 | SDRAM的特別提款權(quán)-蘇256MB的內(nèi)存 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 234K |
| 代理商： | HYM75V32M636LT6 |
32Mx64 bits
PC133 SDRAM SO DIMM
based on 32Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.1/Apr. 02 1
HYM75V32M636(L)T6 Series
DESCRIPTION
The HYM75V32M636(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of four
32Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP pack-
age on a 144 pin glass-epoxy printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each
SDRAM are mounted on the PCB.
The HYM75V32M636(L)T6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of
256M bytes memory. The HYM75V32M636(L)T6 Series are fully synchronous operation referenced to the positive
edge of the clock . All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are
internally pipelined to achieve very high bandwidth.
FEATURES
ORDERING INFORMATION
Part No.
Clock
Frequency
Internal
Bank
Ref.
Power
SDRAM
Package
Plating
HYM75V32M636T6-K
133MHz
4 Banks
8K
Normal
TSOP-II
Gold
HYM75V32M636T6-H
133MHz
HYM75V32M636LT6-K
133MHz
Low Power
HYM75V32M636LT6-H
133MHz
PC133/PC100MHz support
144pin SDRAM SODIMM
Serial Presence Detect with EEPROM
1.00” (25.40mm) Height PCB with double sided com-
ponents
Single 3.3
±
0.3V power supply
All device pins are compatible with LVTTL interface
Data mask function by DQM
SDRAM internal banks : four banks
Module bank : one physical bank
Auto refresh and self refresh
8192 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4 or 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYM75V32M636T6 | 32Mx64|3.3V|K/H|x4|SDR SDRAM - SO DIMM 256MB |
| HYM76V16635HGT8 | 16Mx64|3.3V|K/H|x16|SDR SDRAM - Unbuffered DIMM 128MB |
| HYM76V8655HGT8-P | x64 SDRAM Module |
| HYM76V8655HGT8-S | x64 SDRAM Module |
| HYM76V8735HGT8 | 8Mx72|3.3V|K/H|x9|SDR SDRAM - Unbuffered DIMM 64MB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM75V32M636T6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32Mx64|3.3V|K/H|x4|SDR SDRAM - SO DIMM 256MB |
| HYM76V16635HGT8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mx64|3.3V|K/H|x16|SDR SDRAM - Unbuffered DIMM 128MB |
| HYM76V16635HGT8-H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HYM76V16635HGT8-K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HYM76V16655HGT8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mx64|3.3V|P/S|x16|SDR SDRAM - Unbuffered DIMM 128MB |
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