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參數(shù)資料
| 型號(hào)： | HYM72V8020GS-50 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | Tools, Hand Crimp; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No |
| 中文描述： | 8M X 72 FAST PAGE DRAM MODULE, 50 ns, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大小： | 67K |
| 代理商： | HYM72V8020GS-50 |
Semiconductor Group
7
HYM72V8020/30GS-50/-60
8M x 72-ECC Module
AC Characteristics
(note:5, 6,7,8)
T
A
= 0 to 70 °C,
V
CC
= 3.3
±
0.3 V
Parameter
Symbol
-50
-60
Unit
Note
min.
max.
min.
max.
common parameters
Random read or write cycle time
t
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
T
t
REF
90
–
110
–
ns
RAS precharge time
30
–
40
–
ns
RAS pulse width
50
100k
60
100k
ns
CAS pulse width
13
100k
15
100k
ns
Row address setup time
5
–
5
–
ns
9
Row address hold time
8
–
8
–
ns
10
Column address setup time
2
–
2
–
ns
11
Column address hold time
15
–
15
–
ns
9
RAS to CAS delay time
16
32
18
40
12
RAS to column address delay time
11
20
13
25
ns
12
RAS hold time
18
–
20
–
ns
9
CAS hold time
48
–
58
–
ns
10
CAS to RAS precharge time
10
–
10
–
ns
9
Transition time (rise and fall)
3
30
3
30
ns
7
Refresh period
–
64
–
64
ms
Read Cycle
Access time from RAS
t
RAC
t
CAC
t
AA
t
OEA
t
RAL
t
RCS
t
RCH
t
RRH
–
50
–
60
ns
13,14
Access time from CAS
–
18
–
20
ns
9,13,14
Access time from column address
–
30
–
35
ns
9,13, 15
OE access time
–
18
–
20
ns
9,13
Column address to RAS lead time
30
–
35
–
ns
9
Read command setup time
2
–
2
–
ns
11
Read command hold time
2
–
2
–
ns
11,16
Read command hold time referenced
to RAS
0
–
0
–
ns
16
CAS to output in low-Z
t
CLZ
t
OFF
t
OEZ
2
–
2
–
ns
11,13
Output buffer turn-off delay
–
18
–
20
ns
9,17
Output buffer turn-off delay from OE
–
18
–
20
ns
9,17
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYM72V8030GS-50 | Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes |
| HYM72V8020GS-50- | 8M x 72-Bit Dynamic RAM Module |
| HYM72V8020GS-60 | 8M x 72-Bit Dynamic RAM Module |
| HYM72V8030GS-60 | 8M x 72-Bit Dynamic RAM Module |
| HYM72V8025GS-60 | 8M x 72-Bit EDO- DRAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM72V8020GS-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 72-Bit Dynamic RAM Module |
| HYM72V8020GS-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 72-Bit Dynamic RAM Module |
| HYM72V8025GS-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 72-Bit EDO- DRAM Module |
| HYM72V8025GS-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 72-Bit EDO- DRAM Module |
| HYM72V8025GS-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 72-Bit EDO- DRAM Module |
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