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參數(shù)資料
| 型號(hào)： | HYM72V64736T8 |
| 英文描述： | 64Mx72|3.3V|K/H|x18|SDR SDRAM - Unbuffered DIMM 512MB |
| 中文描述： | 64Mx72 | 3.3 |鉀/ ? | x18 | SDRAM的特別提款權(quán)-無(wú)緩沖DIMM 512MB的 |
| 文件頁(yè)數(shù)： | 1/15頁(yè) |
| 文件大?。?/td> | 215K |
| 代理商： | HYM72V64736T8 |
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128Mx72 bits
PC133 SDRAM Registered DIMM
with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K
HYM72V12C736B(L)S4 Series
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.4/Dec. 2002 1
DESCRIPTION
The HYM72V12C736B(L)S4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed
of thirty six 64Mx4bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II stack package, one 2Kbit EEPROM in
8pin TSSOP package on a 168pin glass-epoxy printed circuit board. One 0.22uF and one 0.0022uF decoupling capac-
itors per each SDRAM are mounted on the PCB.
The HYM72V12C736B(L)S4 Series are Dual In-line Memory Modules suitable for easy interchange and addition of
1Gbytes memory. The HYM72V12C736B(L)S4 Series are fully synchronous operation referenced to the positive edge
of the clock . All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are inter-
nally pipelined to achieve very high bandwidth.
FEATURES
ORDERING INFORMATION
Part No.
Clock
Frequency
Internal
Bank
Ref.
Power
SDRAM
Package
Plating
HYM72V12C736BS4-K
133MHz
4 Banks
8K
Normal
TSOP-II
Gold
HYM72V12C736BS4-H
HYM72V12C736BLS4-K
Low Power
HYM72V12C736BLS4-H
168pin SDRAM Registered DIMM
Serial Presence Detect with EEPROM
1.70” (43.18mm) Height PCB with double sided
components
Single 3.3
±
0.3V power supply
All device pins are compatible with LVTTL interface
Data mask function by DQM
SDRAM internal banks : four banks
Module bank : two physical banks
Auto refresh and self refresh
8192 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4 or 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYM72V64736T8-H | x72 SDRAM Module |
| HYM72V64756BLT8 | 64Mx72|3.3V|P/S|x18|SDR SDRAM - Unbuffered DIMM 512MB |
| HYM72V64756BLT8-P | x72 SDRAM Module |
| HYM72V64756BLT8-S | x72 SDRAM Module |
| HYM72V64756BT8 | 64Mx72|3.3V|P/S|x18|SDR SDRAM - Unbuffered DIMM 512MB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM72V64736T8-H | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x72 SDRAM Module |
| HYM72V64756BLT8 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:64Mx72|3.3V|P/S|x18|SDR SDRAM - Unbuffered DIMM 512MB |
| HYM72V64756BLT8-P | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x72 SDRAM Module |
| HYM72V64756BLT8-S | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x72 SDRAM Module |
| HYM72V64756BT8 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:64Mx72|3.3V|P/S|x18|SDR SDRAM - Unbuffered DIMM 512MB |
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