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參數(shù)資料
| 型號： | HYM72V4005GS-50- |
| 廠商： | SIEMENS AG |
| 英文描述： | 4M x 72-Bit EDO-DRAM Module |
| 中文描述： | 4米× 72位江戶記憶體模組 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 70K |
| 代理商： | HYM72V4005GS-50- |
Semiconductor Group
8
HYM72V4005/15GS-50/-60
4M x 72-ECC EDO-Module
Output buffer turn-off delay from OE
t
OEZ
t
DZC
t
DZO
t
CDD
t
ODD
–
18
–
20
ns
9,17
CAS delay time from Din
0
–
0
–
ns
18
Data to OE low delay
0
–
0
–
ns
18
CAS high to data delay
15
–
18
–
ns
9,19
OE high to data delay
15
–
18
–
ns
9,19
Write Cycle
Write command hold time
t
WCH
t
WP
t
WCS
t
RWL
t
CWL
t
DS
t
DH
13
–
15
–
ns
9
Write command pulse width
8
–
10
–
ns
Write command setup time
2
–
2
–
ns
11,20
Write command to RAS lead time
18
–
20
–
ns
9
Write command to CAS lead time
13
–
15
–
ns
Data setup time
-2
–
-2
–
ns
10,21
Data hold time
13
–
15
–
ns
9,21
Read-Modify-Write Cycle
Read-write cycle time
RAS to WE delay time
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
118
66
–
–
143
77
–
–
ns
ns
9
11,21
CAS to WE delay time
29
–
34
–
ns
11,21
Column address to WE delay time
41
–
49
–
ns
11,21
OE command hold time
8
–
11
–
ns
10
Hyper Page Mode (EDO) Cycle
Hyper page mode cycle time
t
PC
t
CP
t
CPA
t
COH
t
RAS
t
RHCP
t
OES
20
–
25
–
ns
CAS precharge time
8
–
10
–
ns
Access time from CAS precharge
–
32
–
37
ns
9,13
Output data hold time
3
–
3
–
ns
10
RAS pulse width
50
200k
60
200k
ns
CAS precharge to RAS Delay
32
–
37
–
ns
9
OE setup time prior to CAS
5
–
5
–
ns
AC Characteristics
(cont’d) (note: 5,6,7,8)
T
A
= 0 to 70 °C,
V
CC
= 3.3
±
0.3 V
Parameter
Symbol
-50
-60
Unit
Note
min.
max.
min.
max.
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| HYM72V4045GU-50 | 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module |
| HYM64V4005GU-50 | 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module |
| HYM64V4005GU-60 | GIGASTATION2 SNAP FITTINGF CONN, IVORY |
| HYM64V4045GU-50 | 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module |
| HYM64V4045GU-60 | 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM72V4005GS-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 72-Bit EDO-DRAM Module |
| HYM72V4005GU-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module |
| HYM72V4005GU-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module |
| HYM72V4005GU-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 EDO Page Mode DRAM Module |
| HYM72V4010GS-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 72-Bit Dynamic RAM Module |
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