參數(shù)資料
型號(hào): HYM72V12C736BLS4-H
英文描述: SDRAM|128MX72|CMOS|DIMM|168PIN|PLASTIC
中文描述: 內(nèi)存| 128MX72 |的CMOS |內(nèi)存| 168線|塑料
文件頁(yè)數(shù): 12/15頁(yè)
文件大?。?/td> 215K
代理商: HYM72V12C736BLS4-H
PC133 SDRAM Registered DIMM
Rev. 0.4/Dec. 2002
13
HYM72V12C736B(L)S4 Series
AC CHARACTERISTICS II
Note :
1. Timing delay due to the register is considered in a registered DIMM
2. A new command can be given tRRC after self refresh exit
Parameter
Symbol
-K
-H
Unit
Note
Min
Max
Min
Max
RAS Cycle Time
Operation
tRC
60
-
65
-
ns
Auto Refresh
tRRC
60
-
65
-
ns
RAS to CAS Delay
tRCD
15
-
20
-
ns
RAS Active Time
tRAS
45
100K
45
100K
ns
RAS Precharge Time
tRP
15
-
20
-
ns
RAS to RAS Bank Active Delay
tRRD
15
-
15
-
ns
CAS to CAS Delay
tCCD
1
-
1
-
CLK
Write Command to Data-In Delay
tWTL
0
-
0
-
CLK
Data-In to Precharge Command
tDPL
2
-
2
-
CLK
Data-In to Active Command
tDAL
5
-
5
-
CLK
DQM to Data-Out Hi-Z
tDQZ
2
-
2
-
CLK
DQM to Data-In Mask
tDQM
0
-
0
-
CLK
MRS to New Command
tMRD
2
-
2
-
CLK
Precharge to Data
Output Hi-Z
CAS Latency = 3
tPROZ3
3
-
3
-
CLK
CAS Latency = 2
tPROZ2
2
-
2
-
CLK
Power Down Exit Time
tPDE
1
-
1
-
CLK
Self Refresh Exit Time
tSRE
1
-
1
-
CLK
1
Refresh Time
tREF
-
64
-
64
ms
相關(guān)PDF資料
PDF描述
HYM72V12C736BLS4-K SDRAM|128MX72|CMOS|DIMM|168PIN|PLASTIC
HYM72V12C736BS4 128Mx72|3.3V|K/H|x36|SDR SDRAM - Registered DIMM 1GB
HYM72V12C736BS4-H SDRAM|128MX72|CMOS|DIMM|168PIN|PLASTIC
HYM72V12C736BS4-K SDRAM|128MX72|CMOS|DIMM|168PIN|PLASTIC
HYM72V12C736K4 128Mx72|3.3V|H|x36|SDR SDRAM - Registered DIMM 1GB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYM72V12C736BLS4-K 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|128MX72|CMOS|DIMM|168PIN|PLASTIC
HYM72V12C736BS4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128Mx72|3.3V|K/H|x36|SDR SDRAM - Registered DIMM 1GB
HYM72V12C736BS4-H 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|128MX72|CMOS|DIMM|168PIN|PLASTIC
HYM72V12C736BS4-K 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|128MX72|CMOS|DIMM|168PIN|PLASTIC
HYM72V12C736K4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128Mx72|3.3V|H|x36|SDR SDRAM - Registered DIMM 1GB