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參數(shù)資料
| 型號： | HYM364035GS-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 4M x 36-Bit EDO-DRAM Module |
| 中文描述： | 4M X 36 EDO DRAM MODULE, 60 ns, SMA72 |
| 封裝： | SIMM-72 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 476K |
| 代理商： | HYM364035GS-60 |
Semiconductor Group
5
HYM 364035S/GS-60
4M
×
36-Bit EDO-Module
Absolute Maximum Ratings
Operation temperature range .........................................................................................0 to + 70 C
Storage temperature range......................................................................................... – 55 to 125 C
Input/output voltage ........................................................................– 0.5 V to min (
V
CC
+ 0.5, 7.0) V
Power supply voltage......................................................................................................– 1 to + 7 V
Power dissipation................................................................................................................... 9.24 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T
A
= 0 to 70 C,
V
CC
= 5 V
±
10 %
Parameter
Symbol
Limit Values
Unit
Test
Condition
min.
max.
V
CC
+ 0.5
0.8
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.4
V
1)
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V <
V
IN
< 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
< 5.5 V)
Average
V
CC
supply current
(RAS, CAS, address cycling,
t
RC
=
t
RC
min)
– 0.5
V
1)
2.4
–
V
1)
–
0.4
V
μ
A
1)
– 80
80
1)
I
O(L)
– 10
10
μ
A
1)
-60 ns version
I
CC1
–
1320
mA
2),3),4)
Standby
V
CC
supply current
(RAS = CAS =
V
IH
)
Average
V
CC
supply current
during RAS only refresh cycles
(RAS cycling, CAS =
V
IH
,
t
RC
=
t
RC
min)
I
CC2
–
24
mA
-60 ns version
I
CC3
–
1320
mA
2),4)
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| HYM368020GS-60 | 8M x 36-Bit Dynamic RAM Module |
| HYM368020S | 8M x 36-Bit Dynamic RAM Module |
| HYM368020S-60 | 8M x 36-Bit Dynamic RAM Module |
| HYM368025S | 8M x 36-Bit EDO - DRAM Module |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM364035S | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 36-Bit EDO-DRAM Module |
| HYM364035S-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 36-Bit EDO-DRAM Module |
| HYM365120S-80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Page Mode DRAM Module |
| HYM368020GS-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 36-Bit Dynamic RAM Module |
| HYM368020GS-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Page Mode DRAM Module |
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