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參數(shù)資料
| 型號(hào)： | HYM322160S-70 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 2M x 32-Bit Dynamic RAM Module |
| 中文描述： | 2M X 32 FAST PAGE DRAM MODULE, 70 ns, SMA72 |
| 封裝： | SIMM-72 |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商： | HYM322160S-70 |
Semiconductor Group
555
HYM 322160S/GS-60/-70
2M x 32-Bit
Absolute Maximum Ratings
Operation temperature range .........................................................................................0 to + 70 C
Storage temperature range......................................................................................... – 55 to 125 C
Soldering temperature ............................................................................................................ 260 C
Soldering time.............................................................................................................................10 s
Input/output voltage ........................................................................................................– 1 to + 7 V
Power supply voltage......................................................................................................– 1 to + 7 V
Power dissipation..................................................................................................................... 6.2 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
1)
T
A
= 0 to 70 C,
V
CC
= 5 V
±
10 %
Parameter
Symbol
Limit Values
Unit
Test
Condition
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.4
5.5
V
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V <
V
IN
< 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
< 5.5 V)
Average
V
CC
supply current
(RAS, CAS, address cycling,
t
RC
=
t
RC
min)
– 1.0
0.8
V
2.4
–
V
–
0.4
V
μ
A
– 20
20
I
O(L)
– 20
20
μ
A
-60 version
-70 version
I
CC1
–
–
880
800
mA
mA
2)
,
3)
Standby
V
CC
supply current
(RAS = CAS =
V
IH
)
Average
V
CC
supply current
during RAS only refresh cycles
(RAS cycling, CAS =
V
IH
,
t
RC
=
t
RC
min)
I
CC2
–
32
mA
-60 version
-70 version
I
CC3
–
–
880
800
mA
mA
2)
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