參數(shù)資料
型號(hào)： HYM322160GS-70
廠(chǎng)商： SIEMENS A G
元件分類(lèi)： DRAM
英文描述： 2M x 32-Bit Dynamic RAM Module
中文描述： 2M X 32 FAST PAGE DRAM MODULE, 70 ns, SMA72
封裝： SIMM-72
文件頁(yè)數(shù)： 5/9頁(yè)
文件大小： 142K
代理商： HYM322160GS-70
Semiconductor Group
555
HYM 322160S/GS-60/-70
2M x 32-Bit
Absolute Maximum Ratings
Operation temperature range .........................................................................................0 to + 70 C
Storage temperature range......................................................................................... – 55 to 125 C
Soldering temperature ............................................................................................................ 260 C
Soldering time.............................................................................................................................10 s
Input/output voltage ........................................................................................................– 1 to + 7 V
Power supply voltage......................................................................................................– 1 to + 7 V
Power dissipation..................................................................................................................... 6.2 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
1)
T
A
= 0 to 70 C,
V
CC
= 5 V
±
10 %
Parameter
Symbol
Limit Values
Unit
Test
Condition
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.4
5.5
V
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V <
V
IN
< 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
< 5.5 V)
Average
V
CC
supply current
(RAS, CAS, address cycling,
t
RC
=
t
RC
min)
– 1.0
0.8
V
2.4
–
V
–
0.4
V
μ
A
– 20
20
I
O(L)
– 20
20
μ
A
-60 version
-70 version
I
CC1
–
–
880
800
mA
mA
2)
,
3)
Standby
V
CC
supply current
(RAS = CAS =
V
IH
)
Average
V
CC
supply current
during RAS only refresh cycles
(RAS cycling, CAS =
V
IH
,
t
RC
=
t
RC
min)
I
CC2
–
32
mA
-60 version
-70 version
I
CC3
–
–
880
800
mA
mA
2)
相關(guān)PDF資料
PDF描述
HYM322160S 2M x 32-Bit Dynamic RAM Module
HYM324000GD- CAP 0.5PF 50V +/-0.1PF THIN-FILM SN96/AG4/NI 30PPM TR-7-PA
HYM324000GD-50 CAP 0.5PF 50V +/-0.2PF THIN-FILM SN96/AG4/NI 30PPM TR-7-PA
HYM324000GD-60 4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
HYM324025S-60 4M x 32-Bit EDO-DRAM Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYM322160S 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:2M x 32-Bit Dynamic RAM Module
HYM322160S-60 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:2M x 32-Bit Dynamic RAM Module
HYM322160S-70 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:2M x 32-Bit Dynamic RAM Module
HYM322185S-60 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x32 EDO Page Mode DRAM Module
HYM324000GD- 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
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