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參數(shù)資料
| 型號(hào)： | HYM321000GS-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module |
| 中文描述： | 1M X 32 FAST PAGE DRAM MODULE, 60 ns, SMA72 |
| 封裝： | SIMM-72 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | HYM321000GS-60 |
Semiconductor Group
5
HYM 321000S/GS-50/-60
1M
×
32-Bit
Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to + 70 °C
Storage temperature range......................................................................................– 55 to + 125 °C
Input/output voltage ...........................................................................– 0.5 to min (Vcc + 0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................... 2.52 W
Data out current (short circuit) ................................................................................................ 50 mA
Note
: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
1)
T
A
= 0 to 70 °C;
V
CC
= 5 V
±
10 %
Parameter
Symbol
Limit Values
Unit
Test
Condition
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.4
5.5
V
–
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V <
V
IN
< 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
< 5.5 V)
Average
V
CC
supply current:
– 1.0
0.8
V
–
2.4
–
V
–
–
0.4
V
μ
A
–
– 10
10
–
I
O(L)
– 10
10
μ
A
–
HYM 321000S/GS-50
HYM 321000S/GS-60
(RAS, CAS, address cycling,
t
RC
=
t
RC
min.)
Standby
V
CC
supply current
(RAS = CAS =
V
IH
)
Average
V
CC
supply current during RAS
only refresh cycles:
HYM 321000S/GS-50
HYM 321000S/GS-60
I
CC1
–
–
–
400
360
mA
mA
2), 3),4)
I
CC2
–
4
mA
–
(RAS cycling, CAS =
V
IH
, t
RC
=
t
RC
min.)
I
CC3
–
–
–
400
360
mA
mA
2),4)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYM321000S-60 | 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module |
| HYM321000S | 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module |
| HYM321000S-50 | 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module |
| HYM321000GS-50 | 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module |
| HYM321160GS-60 | 1M x 32-Bit Dynamic RAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM321000S | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module |
| HYM321000S-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module |
| HYM321000S-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module |
| HYM321005GS-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 32-Bit Dynamic RAM Module |
| HYM321005GS-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 32-Bit Dynamic RAM Module |
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