參數(shù)資料
型號: HYM321000GS-50
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module
中文描述: 1M X 32 FAST PAGE DRAM MODULE, 50 ns, SMA72
封裝: SIMM-72
文件頁數(shù): 6/10頁
文件大?。?/td> 80K
代理商: HYM321000GS-50
Semiconductor Group
6
HYM 321000S/GS-50/-60
1M
×
32-Bit
DC Characteristics
(cont’d)
1)
Capacitance
T
A
= 0 to 70 °C;
V
CC
= 5 V
±
10 %;
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
Test
Condition
min.
max.
Average
V
CC
supply current during fast
page mode:
HYM 321000S/GS-50
HYM 321000S/GS-60
(RAS =
V
IL,
CAS, address cycling
t
PC
=
t
PC
min.)
Standby
V
CC
supply current
(RAS = CAS =
V
CC
– 0.2 V)
Average
V
CC
supply current during
CAS-before-RAS refresh mode:
I
CC4
110
100
mA
mA
2), 3),4)
I
CC5
2
mA
HYM 321000S/GS-50
HYM 321000S/GS-60
(RAS, CAS cycling
, t
RC
=
t
RC
min.)
I
CC6
400
360
mA
mA
2),4)
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A9)
C
I1
C
I2
C
I3
C
I4
C
IO1
25
pF
Input capacitance (RAS0, RAS2)
20
pF
Input capacitance (CAS0-CAS3)
20
pF
Input capacitance (WE)
25
pF
I/O capacitance (DQ0-DQ31)
15
pF
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